High temperature capacitors using a BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system

Jong Bong Lim; Shujun Zhang; Thomas R. Shrout

doi:10.1007/s13391-011-0311-8

High temperature capacitors using a BiScO₃-BaTiO₃-(K_1/2Bi_1/2)TiO₃ ternary system

Jong Bong Lim, Shujun Zhang, Thomas R. Shrout

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

BiScO₃-BaTiO₃ with (K_1/2Bi_1/2)TiO₃ [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCe{open}s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm³ at 100 kV/cm for the BSBT-KBT20.

Original language	English (US)
Pages (from-to)	71-75
Number of pages	5
Journal	Electronic Materials Letters
Volume	7
Issue number	1
DOIs	https://doi.org/10.1007/s13391-011-0311-8
State	Published - Mar 2011

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1007/s13391-011-0311-8

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@article{76bb1211368b4bde97efc042a8fa0c9c,

title = "High temperature capacitors using a BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system",

abstract = "BiScO3-BaTiO3 with (K1/2Bi1/2)TiO3 [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCe{open}s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm3 at 100 kV/cm for the BSBT-KBT20.",

author = "Lim, {Jong Bong} and Shujun Zhang and Shrout, {Thomas R.}",

year = "2011",

month = mar,

doi = "10.1007/s13391-011-0311-8",

language = "English (US)",

volume = "7",

pages = "71--75",

journal = "Electronic Materials Letters",

issn = "1738-8090",

publisher = "Springer Netherlands",

number = "1",

}

TY - JOUR

T1 - High temperature capacitors using a BiScO3-BaTiO3-(K1/2Bi1/2)TiO3 ternary system

AU - Lim, Jong Bong

AU - Zhang, Shujun

AU - Shrout, Thomas R.

PY - 2011/3

Y1 - 2011/3

N2 - BiScO3-BaTiO3 with (K1/2Bi1/2)TiO3 [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCe{open}s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm3 at 100 kV/cm for the BSBT-KBT20.

AB - BiScO3-BaTiO3 with (K1/2Bi1/2)TiO3 [BSBT-KBTx] in the perovskite solid solution system were prepared by conventional ceramic processing for potential high temperature capacitors. The effect of KBT on the dielectric properties of BSBT was investigated as a function of temperature and frequency. The BSBT-KBT20 exhibited high dielectric permittivity and low dielectric loss over the temperature range from 100°C to 300°C with flat coefficients of temperature (TCe{open}s). In addition, BSBT-KBTx were observed to possess dielectric relaxation behavior at temperatures (> RT) as observed in lead-based relaxors. Furthermore, the E-field polarization behavior was investigated showing high energy density of 1.28 J/cm3 at 100 kV/cm for the BSBT-KBT20.

UR - http://www.scopus.com/inward/record.url?scp=79954568595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79954568595&partnerID=8YFLogxK

U2 - 10.1007/s13391-011-0311-8

DO - 10.1007/s13391-011-0311-8

M3 - Article

AN - SCOPUS:79954568595

SN - 1738-8090

VL - 7

SP - 71

EP - 75

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 1

ER -

High temperature capacitors using a BiScO₃-BaTiO₃-(K_1/2Bi_1/2)TiO₃ ternary system

Abstract

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