High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs

J. M. Catchmark; T. Mullally; R. A. Morgan; M. T. Asom; G. D. Guth; M. W. Focht; D. N. Christodoulides

doi:10.1049/el:19941447

High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs

J. M. Catchmark, T. Mullally, R. A. Morgan, M. T. Asom, G. D. Guth, M. W. Focht, D. N. Christodoulides

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Abstract

Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design.

Original language	English (US)
Pages (from-to)	2136-2138
Number of pages	3
Journal	Electronics Letters
Volume	30
Issue number	25
DOIs	https://doi.org/10.1049/el:19941447
State	Published - Nov 24 1994

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19941447

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title = "High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs",

abstract = "Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design.",

author = "Catchmark, {J. M.} and T. Mullally and Morgan, {R. A.} and Asom, {M. T.} and Guth, {G. D.} and Focht, {M. W.} and Christodoulides, {D. N.}",

year = "1994",

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doi = "10.1049/el:19941447",

language = "English (US)",

volume = "30",

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journal = "Electronics Letters",

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T1 - High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs

AU - Catchmark, J. M.

AU - Mullally, T.

AU - Morgan, R. A.

AU - Asom, M. T.

AU - Guth, G. D.

AU - Focht, M. W.

AU - Christodoulides, D. N.

PY - 1994/11/24

Y1 - 1994/11/24

N2 - Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design.

AB - Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design.

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DO - 10.1049/el:19941447

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EP - 2138

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs

Abstract

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