High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs

J. M. Catchmark; T. Mullally; R. A. Morgan; M. T. Asom; G. D. Guth; M. W. Focht; D. N. Christodoulides

doi:10.1049/el:19941447

High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs

J. M. Catchmark
, T. Mullally
, R. A. Morgan
, M. T. Asom
, G. D. Guth
, M. W. Focht
, D. N. Christodoulides

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design.

Original language	English (US)
Pages (from-to)	2136-2138
Number of pages	3
Journal	Electronics Letters
Volume	30
Issue number	25
DOIs	https://doi.org/10.1049/el:19941447
State	Published - Nov 24 1994

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19941447

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title = "High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs",

abstract = "Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design.",

author = "Catchmark, \{J. M.\} and T. Mullally and Morgan, \{R. A.\} and Asom, \{M. T.\} and Guth, \{G. D.\} and Focht, \{M. W.\} and Christodoulides, \{D. N.\}",

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doi = "10.1049/el:19941447",

language = "English (US)",

volume = "30",

pages = "2136--2138",

journal = "Electronics Letters",

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T1 - High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs

AU - Catchmark, J. M.

AU - Mullally, T.

AU - Morgan, R. A.

AU - Asom, M. T.

AU - Guth, G. D.

AU - Focht, M. W.

AU - Christodoulides, D. N.

PY - 1994/11/24

Y1 - 1994/11/24

N2 - Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design.

AB - Greater than 150°C CW lasing is achieved from an unbonded GaAs/AlGaAs VCSEL by employing high barrier confinement spacers and by blue shifting the optical gain. This is done while maintaining a variation in threshold current of only ±0.93 mA over a range greater than 150°C. These results are compared to a low barrier VCSEL of similar design.

UR - https://www.scopus.com/pages/publications/0028768752

UR - https://www.scopus.com/pages/publications/0028768752#tab=citedBy

U2 - 10.1049/el:19941447

DO - 10.1049/el:19941447

M3 - Article

AN - SCOPUS:0028768752

SN - 0013-5194

VL - 30

SP - 2136

EP - 2138

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

High temperature CW operation of GaAs/AIGaAs high barrier gain offset VCSELs

Abstract

All Science Journal Classification (ASJC) codes

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