TY - JOUR
T1 - High-Temperature Dielectrics in BNT-BT-Based Solid Solution
AU - Xu, Qi
AU - Liu, Hanxing
AU - Xie, Juan
AU - Zhang, Lin
AU - Luo, Wei
AU - Huang, Xuechen
AU - Cao, Minghe
AU - Hao, Hua
AU - Yao, Zhonghua
AU - Lanagan, Michael T.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/10
Y1 - 2016/10
N2 - Bi0.5Na0.5TiO3-BaTiO3 (BNT-BT)-based ternary solid solutions were investigated for high-temperature capacitor applications. Through a comprehensive investigation of the (1 - x)(0.92Bi0.5Na0.5TiO3-0.08BaTiO3)- x NaNbO3 [(1 - x)(BNT-BT)- x NN, x= 0-0.45] system, 0.85(BNT-BT)-0.15NN was selected as the parent matrix due to its relatively high permittivity (>1800) and favorable energy-storage density (0.56 J/cm3 at 7 kV/mm). The effect of bismuth substitution on the dielectric properties of the matrix was further characterized. The introduction of bismuth greatly broadened the operational temperature range of 0.85(BNT-BT)-0.15Na1-3yBiyNbO3 ceramics to over 327 °C for a ±15% tolerance. The dc resistivities were of the order of 108 - 1011 Ω · m magnitude from room temperature to 300 °C. An activation energy of 1.1-1.2 eV in 200-350 °C was obtained from dc resistivity data, suggesting that the conduction process in this temperature range may be associated with oxygen vacancy migration. Furthermore, the energy-storage properties were largely improved by the addition of bismuth. When the substitution of Bi over Na achieved was up to 7%, the energy-storage density and efficiency reached 0.62 J/cm3 and 88% at 7 kV/mm, respectively. These results confirm that a BNT-BT-based solid solution is a promising candidate for lead-free high-temperature capacitor applications.
AB - Bi0.5Na0.5TiO3-BaTiO3 (BNT-BT)-based ternary solid solutions were investigated for high-temperature capacitor applications. Through a comprehensive investigation of the (1 - x)(0.92Bi0.5Na0.5TiO3-0.08BaTiO3)- x NaNbO3 [(1 - x)(BNT-BT)- x NN, x= 0-0.45] system, 0.85(BNT-BT)-0.15NN was selected as the parent matrix due to its relatively high permittivity (>1800) and favorable energy-storage density (0.56 J/cm3 at 7 kV/mm). The effect of bismuth substitution on the dielectric properties of the matrix was further characterized. The introduction of bismuth greatly broadened the operational temperature range of 0.85(BNT-BT)-0.15Na1-3yBiyNbO3 ceramics to over 327 °C for a ±15% tolerance. The dc resistivities were of the order of 108 - 1011 Ω · m magnitude from room temperature to 300 °C. An activation energy of 1.1-1.2 eV in 200-350 °C was obtained from dc resistivity data, suggesting that the conduction process in this temperature range may be associated with oxygen vacancy migration. Furthermore, the energy-storage properties were largely improved by the addition of bismuth. When the substitution of Bi over Na achieved was up to 7%, the energy-storage density and efficiency reached 0.62 J/cm3 and 88% at 7 kV/mm, respectively. These results confirm that a BNT-BT-based solid solution is a promising candidate for lead-free high-temperature capacitor applications.
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U2 - 10.1109/TUFFC.2016.2574860
DO - 10.1109/TUFFC.2016.2574860
M3 - Article
AN - SCOPUS:84991491899
SN - 0885-3010
VL - 63
SP - 1656
EP - 1662
JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
IS - 10
M1 - 7482732
ER -