High-Temperature Dielectrics in BNT-BT-Based Solid Solution

Qi Xu, Hanxing Liu, Juan Xie, Lin Zhang, Wei Luo, Xuechen Huang, Minghe Cao, Hua Hao, Zhonghua Yao, Michael T. Lanagan

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


Bi0.5Na0.5TiO3-BaTiO3 (BNT-BT)-based ternary solid solutions were investigated for high-temperature capacitor applications. Through a comprehensive investigation of the (1 - x)(0.92Bi0.5Na0.5TiO3-0.08BaTiO3)- x NaNbO3 [(1 - x)(BNT-BT)- x NN, x= 0-0.45] system, 0.85(BNT-BT)-0.15NN was selected as the parent matrix due to its relatively high permittivity (>1800) and favorable energy-storage density (0.56 J/cm3 at 7 kV/mm). The effect of bismuth substitution on the dielectric properties of the matrix was further characterized. The introduction of bismuth greatly broadened the operational temperature range of 0.85(BNT-BT)-0.15Na1-3yBiyNbO3 ceramics to over 327 °C for a ±15% tolerance. The dc resistivities were of the order of 108 - 1011 Ω · m magnitude from room temperature to 300 °C. An activation energy of 1.1-1.2 eV in 200-350 °C was obtained from dc resistivity data, suggesting that the conduction process in this temperature range may be associated with oxygen vacancy migration. Furthermore, the energy-storage properties were largely improved by the addition of bismuth. When the substitution of Bi over Na achieved was up to 7%, the energy-storage density and efficiency reached 0.62 J/cm3 and 88% at 7 kV/mm, respectively. These results confirm that a BNT-BT-based solid solution is a promising candidate for lead-free high-temperature capacitor applications.

Original languageEnglish (US)
Article number7482732
Pages (from-to)1656-1662
Number of pages7
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Issue number10
StatePublished - Oct 2016

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Acoustics and Ultrasonics
  • Electrical and Electronic Engineering


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