High temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensors

Shujun Zhang; Thomas R. Shrout; Yiting Fei; Bruce H.T. Chai; Eric Frantz; David W. Snyder

doi:10.1109/FREQ.2008.4623011

High temperature piezoelectric single crystal ReCa₄O(BO ₃)₃ for sensors

Shujun Zhang, Thomas R. Shrout, Yiting Fei, Bruce H.T. Chai, Eric Frantz, David W. Snyder

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

3 Scopus citations

Abstract

Large size and high quality ReCa₄O(BO₃)₃ single crystals were grown by the Czochralski pulling method. In this work, the electrical properties were investigated at room temperature and elevated temperature for YCa₄O(BO₃)₃ (YCOB). The dielectric permittivity, piezoelectric strain coefficient and electromechanical coupling were found to be on the order of 11, 6pC/N and 12.5%, respectively, with a high piezoelectric voltage coefficient around 0.067Vm/N. The electrical resistivity of YCOB was found to be 2×10⁸Ohm.cm at 800°C, with Q values of > 4,500 at 950°C. The frequency / temperature coefficient of YCOB was found to be -75 ∼ -85 ppm/K in the temperature range of 30-950°C, depending on the crystal orientation. Together with its temperature independent properties, ReCOB crystals are promising candidates for sensing applications at elevated temperatures.

Original language	English (US)
Title of host publication	2008 IEEE International Frequency Control Symposium, FCS
Pages	316-319
Number of pages	4
DOIs	https://doi.org/10.1109/FREQ.2008.4623011
State	Published - 2008
Event	2008 IEEE International Frequency Control Symposium, FCS - Honolulu, HI, United States Duration: May 19 2008 → May 21 2008

Publication series

Name	2008 IEEE International Frequency Control Symposium, FCS

Other

Other	2008 IEEE International Frequency Control Symposium, FCS
Country/Territory	United States
City	Honolulu, HI
Period	5/19/08 → 5/21/08

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electrical and Electronic Engineering

Access to Document

10.1109/FREQ.2008.4623011

Cite this

@inproceedings{4a4a74b7736c417393e4dbb71b398c53,

title = "High temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensors",

abstract = "Large size and high quality ReCa4O(BO3)3 single crystals were grown by the Czochralski pulling method. In this work, the electrical properties were investigated at room temperature and elevated temperature for YCa4O(BO3)3 (YCOB). The dielectric permittivity, piezoelectric strain coefficient and electromechanical coupling were found to be on the order of 11, 6pC/N and 12.5%, respectively, with a high piezoelectric voltage coefficient around 0.067Vm/N. The electrical resistivity of YCOB was found to be 2×108Ohm.cm at 800°C, with Q values of > 4,500 at 950°C. The frequency / temperature coefficient of YCOB was found to be -75 ∼ -85 ppm/K in the temperature range of 30-950°C, depending on the crystal orientation. Together with its temperature independent properties, ReCOB crystals are promising candidates for sensing applications at elevated temperatures.",

author = "Shujun Zhang and Shrout, {Thomas R.} and Yiting Fei and Chai, {Bruce H.T.} and Eric Frantz and Snyder, {David W.}",

year = "2008",

doi = "10.1109/FREQ.2008.4623011",

language = "English (US)",

isbn = "9781424417957",

series = "2008 IEEE International Frequency Control Symposium, FCS",

pages = "316--319",

booktitle = "2008 IEEE International Frequency Control Symposium, FCS",

note = "2008 IEEE International Frequency Control Symposium, FCS ; Conference date: 19-05-2008 Through 21-05-2008",

}

Zhang, S, Shrout, TR, Fei, Y, Chai, BHT, Frantz, E & Snyder, DW 2008, High temperature piezoelectric single crystal ReCa₄O(BO ₃)₃ for sensors. in 2008 IEEE International Frequency Control Symposium, FCS., 4623011, 2008 IEEE International Frequency Control Symposium, FCS, pp. 316-319, 2008 IEEE International Frequency Control Symposium, FCS, Honolulu, HI, United States, 5/19/08. https://doi.org/10.1109/FREQ.2008.4623011

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T1 - High temperature piezoelectric single crystal ReCa4O(BO 3)3 for sensors

AU - Zhang, Shujun

AU - Shrout, Thomas R.

AU - Fei, Yiting

AU - Chai, Bruce H.T.

AU - Frantz, Eric

AU - Snyder, David W.

PY - 2008

Y1 - 2008

N2 - Large size and high quality ReCa4O(BO3)3 single crystals were grown by the Czochralski pulling method. In this work, the electrical properties were investigated at room temperature and elevated temperature for YCa4O(BO3)3 (YCOB). The dielectric permittivity, piezoelectric strain coefficient and electromechanical coupling were found to be on the order of 11, 6pC/N and 12.5%, respectively, with a high piezoelectric voltage coefficient around 0.067Vm/N. The electrical resistivity of YCOB was found to be 2×108Ohm.cm at 800°C, with Q values of > 4,500 at 950°C. The frequency / temperature coefficient of YCOB was found to be -75 ∼ -85 ppm/K in the temperature range of 30-950°C, depending on the crystal orientation. Together with its temperature independent properties, ReCOB crystals are promising candidates for sensing applications at elevated temperatures.

AB - Large size and high quality ReCa4O(BO3)3 single crystals were grown by the Czochralski pulling method. In this work, the electrical properties were investigated at room temperature and elevated temperature for YCa4O(BO3)3 (YCOB). The dielectric permittivity, piezoelectric strain coefficient and electromechanical coupling were found to be on the order of 11, 6pC/N and 12.5%, respectively, with a high piezoelectric voltage coefficient around 0.067Vm/N. The electrical resistivity of YCOB was found to be 2×108Ohm.cm at 800°C, with Q values of > 4,500 at 950°C. The frequency / temperature coefficient of YCOB was found to be -75 ∼ -85 ppm/K in the temperature range of 30-950°C, depending on the crystal orientation. Together with its temperature independent properties, ReCOB crystals are promising candidates for sensing applications at elevated temperatures.

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