High-temperature quantum valley Hall effect with quantized resistance and a topological switch

  • Ke Huang
  • , Hailong Fu
  • , Kenji Watanabe
  • , Takashi Taniguchi
  • , Jun Zhu

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states—a manifestation of the quantum valley Hall effect in Bernal bilayer graphene—quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.

Original languageEnglish (US)
Pages (from-to)657-661
Number of pages5
JournalScience
Volume385
Issue number6709
DOIs
StatePublished - Aug 9 2024

All Science Journal Classification (ASJC) codes

  • General

Fingerprint

Dive into the research topics of 'High-temperature quantum valley Hall effect with quantized resistance and a topological switch'. Together they form a unique fingerprint.

Cite this