Abstract
High-temperature reverse-bias (HTRB) and Fowler-Nordheim (FN) stresses were applied to assess the reliability of n-channel Ushaped trench-gated metal-oxide-Si field-effect transistors (NUMOSFETs) of ∼0.5 μm trench width and ∼1 μm channel length. The HTRB causes degradations in the threshold voltage and drain leakage of the N-UMOSFET. The degradation is observed when the HTRB is applied in a humid ambient and is attributed to the generation, by the stress, of hydrogen protons (H+s) in the gate oxide. It is concluded that HTRB gives rise to negative-bias temperature instability (NBTI) in a parasitic P-channel MOSFET structure occurring in the trench base of the N-UMOSFET. The NBTI is promoted by the degraded condition of the gate oxide at the trench base as observed by charge pumping and SEM following FN stress of the N-UMOSFET.
Original language | English (US) |
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Pages (from-to) | 45-52 |
Number of pages | 8 |
Journal | ECS Transactions |
Volume | 64 |
Issue number | 8 |
DOIs | |
State | Published - 2014 |
Event | Symposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico Duration: Oct 5 2014 → Oct 9 2014 |
All Science Journal Classification (ASJC) codes
- General Engineering