High thermal stability OLEDs

Jared S. Price; Noel Christopher Giebink

doi:10.1002/sdtp.11709

High thermal stability OLEDs

Jared S. Price, Noel Christopher Giebink

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We present a general strategy to increase the thermal stability of the hole transport layer in common small molecule OLEDs by >50°C without adversely affecting their electrical characteristics.

Original language	English (US)
Pages (from-to)	565
Number of pages	1
Journal	Digest of Technical Papers - SID International Symposium
Volume	48
Issue number	1
DOIs	https://doi.org/10.1002/sdtp.11709
State	Published - 2017
Event	SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 - Los Angeles, United States Duration: May 21 2017 → May 26 2017

All Science Journal Classification (ASJC) codes

General Engineering

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10.1002/sdtp.11709

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title = "High thermal stability OLEDs",

abstract = "We present a general strategy to increase the thermal stability of the hole transport layer in common small molecule OLEDs by >50°C without adversely affecting their electrical characteristics.",

author = "Price, {Jared S.} and Giebink, {Noel Christopher}",

note = "Funding Information: This research was supported by Dow Chemical. Publisher Copyright: {\textcopyright} (2017) by SID-the Society for Information Display. All rights reserved.; SID Symposium, Seminar, and Exhibition 2017, Display Week 2017 ; Conference date: 21-05-2017 Through 26-05-2017",

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AB - We present a general strategy to increase the thermal stability of the hole transport layer in common small molecule OLEDs by >50°C without adversely affecting their electrical characteristics.

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M3 - Conference article

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JO - Digest of Technical Papers - SID International Symposium

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Y2 - 21 May 2017 through 26 May 2017

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High thermal stability OLEDs

Abstract

All Science Journal Classification (ASJC) codes

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