High voltage (450 V) GaN Schottky rectifiers

Z. Z. Bandić; P. M. Bridger; E. C. Piquette; T. C. McGill; R. P. Vaudo; V. M. Phanse; J. M. Redwing

doi:10.1063/1.123520

High voltage (450 V) GaN Schottky rectifiers

Z. Z. Bandić, P. M. Bridger, E. C. Piquette, T. C. McGill, R. P. Vaudo, V. M. Phanse, J. M. Redwing

Research output: Contribution to journal › Article › peer-review

164 Scopus citations

Abstract

We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO₂ layer. The best devices were characterized by an ON-state voltage of 4.2 V at a current density of 100 A/cm² and a saturation current density of 10^-5 A/cm² at a reverse bias of 100 V. From the measured breakdown voltage we estimated the critical field for electric breakdown in GaN to be (2.2±0.7) × 10⁶ V/cm. This value for the critical field is a lower limit since most of the devices exhibited abrupt and premature breakdown associated with corner and edge effects.

Original language	English (US)
Pages (from-to)	1266-1268
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	9
DOIs	https://doi.org/10.1063/1.123520
State	Published - Mar 1 1999

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.123520

Cite this

@article{84f8981e385846b4994eee629d6dd8b6,

title = "High voltage (450 V) GaN Schottky rectifiers",

abstract = "We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a current density of 100 A/cm2 and a saturation current density of 10-5 A/cm2 at a reverse bias of 100 V. From the measured breakdown voltage we estimated the critical field for electric breakdown in GaN to be (2.2±0.7) × 106 V/cm. This value for the critical field is a lower limit since most of the devices exhibited abrupt and premature breakdown associated with corner and edge effects.",

author = "Bandi{\'c}, {Z. Z.} and Bridger, {P. M.} and Piquette, {E. C.} and McGill, {T. C.} and Vaudo, {R. P.} and Phanse, {V. M.} and Redwing, {J. M.}",

year = "1999",

month = mar,

day = "1",

doi = "10.1063/1.123520",

language = "English (US)",

volume = "74",

pages = "1266--1268",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - High voltage (450 V) GaN Schottky rectifiers

AU - Bandić, Z. Z.

AU - Bridger, P. M.

AU - Piquette, E. C.

AU - McGill, T. C.

AU - Vaudo, R. P.

AU - Phanse, V. M.

AU - Redwing, J. M.

PY - 1999/3/1

Y1 - 1999/3/1

N2 - We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a current density of 100 A/cm2 and a saturation current density of 10-5 A/cm2 at a reverse bias of 100 V. From the measured breakdown voltage we estimated the critical field for electric breakdown in GaN to be (2.2±0.7) × 106 V/cm. This value for the critical field is a lower limit since most of the devices exhibited abrupt and premature breakdown associated with corner and edge effects.

AB - We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate. Several Schottky device geometries were investigated, including lateral geometry with rectangular and circular contacts, mesa devices, and Schottky metal field plate overlapping a SiO2 layer. The best devices were characterized by an ON-state voltage of 4.2 V at a current density of 100 A/cm2 and a saturation current density of 10-5 A/cm2 at a reverse bias of 100 V. From the measured breakdown voltage we estimated the critical field for electric breakdown in GaN to be (2.2±0.7) × 106 V/cm. This value for the critical field is a lower limit since most of the devices exhibited abrupt and premature breakdown associated with corner and edge effects.

UR - http://www.scopus.com/inward/record.url?scp=0000110525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000110525&partnerID=8YFLogxK

U2 - 10.1063/1.123520

DO - 10.1063/1.123520

M3 - Article

AN - SCOPUS:0000110525

SN - 0003-6951

VL - 74

SP - 1266

EP - 1268

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

High voltage (450 V) GaN Schottky rectifiers

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this