High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Y. Cao; R. Chu; R. Li; M. Chen; R. Chang; B. Hughes

doi:10.1063/1.4941814

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Y. Cao, R. Chu, R. Li, M. Chen, R. Chang, B. Hughes

Research output: Contribution to journal › Article › peer-review

130 Scopus citations

Abstract

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 10¹⁵ cm^-3 and 3 × 10¹⁹ cm^-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Original language	English (US)
Article number	062103
Journal	Applied Physics Letters
Volume	108
Issue number	6
DOIs	https://doi.org/10.1063/1.4941814
State	Published - Feb 8 2016

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4941814

Cite this

@article{7da644932b0240b5b54fef7e13d9428c,

title = "High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth",

abstract = "Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.",

author = "Y. Cao and R. Chu and R. Li and M. Chen and R. Chang and B. Hughes",

note = "Publisher Copyright: {\textcopyright} 2016 AIP Publishing LLC.",

year = "2016",

month = feb,

day = "8",

doi = "10.1063/1.4941814",

language = "English (US)",

volume = "108",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

AU - Cao, Y.

AU - Chu, R.

AU - Li, R.

AU - Chen, M.

AU - Chang, R.

AU - Hughes, B.

PY - 2016/2/8

Y1 - 2016/2/8

N2 - Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

AB - Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

UR - http://www.scopus.com/inward/record.url?scp=84958568098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84958568098&partnerID=8YFLogxK

U2 - 10.1063/1.4941814

DO - 10.1063/1.4941814

M3 - Article

AN - SCOPUS:84958568098

SN - 0003-6951

VL - 108

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

M1 - 062103

ER -

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this