High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Y. Cao; R. Chu; R. Li; M. Chen; R. Chang; B. Hughes

doi:10.1063/1.4941814

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Y. Cao
, R. Chu
, R. Li
, M. Chen
, R. Chang
, B. Hughes

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

132 Scopus citations

Abstract

Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 10¹⁵ cm^-3 and 3 × 10¹⁹ cm^-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

Original language	English (US)
Article number	062103
Journal	Applied Physics Letters
Volume	108
Issue number	6
DOIs	https://doi.org/10.1063/1.4941814
State	Published - Feb 8 2016

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4941814

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title = "High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth",

abstract = "Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.",

author = "Y. Cao and R. Chu and R. Li and M. Chen and R. Chang and B. Hughes",

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AU - Cao, Y.

AU - Chu, R.

AU - Li, R.

AU - Chen, M.

AU - Chang, R.

AU - Hughes, B.

PY - 2016/2/8

Y1 - 2016/2/8

N2 - Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

AB - Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical vapor deposition on free-standing GaN substrates. The carbon doping effect on SBD performance was studied by adjusting the growth conditions and spanning the carbon doping concentration between ≤3 × 1015 cm-3 and 3 × 1019 cm-3. Using the optimized growth conditions that resulted in the lowest carbon incorporation, a vertical GaN SBD with a 6-μm drift layer was fabricated. A low turn-on voltage of 0.77 V with a breakdown voltage over 800 V was obtained from the device.

UR - https://www.scopus.com/pages/publications/84958568098

UR - https://www.scopus.com/pages/publications/84958568098#tab=citedBy

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

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ER -

High-voltage vertical GaN Schottky diode enabled by low-carbon metal-organic chemical vapor deposition growth

Abstract

All Science Journal Classification (ASJC) codes

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