Highly accelerated lifetime testing (HALT) of lead zirconate titanate (PZT) thin films

R. G. Polcawich; C. Feng; P. Vanatta; R. Piekarz; Susan E. Trolier-McKinstry; M. Dubey; M. Ervin

Highly accelerated lifetime testing (HALT) of lead zirconate titanate (PZT) thin films

R. G. Polcawich, C. Feng, P. Vanatta, R. Piekarz, Susan E. Trolier-McKinstry, M. Dubey, M. Ervin

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The lifetime of PZT films under dc field is relevant for both capacitive and electromechanical applications. To assess the factors controlling the lifetime, a series of highly accelerated lifetime tests (HALT) were performed on ∼0.88 μm thick sol-gel PZT (52/48) thin films exposed to temperatures ranging from 100°C to 180°C and electric fields ranging from 284 to 455 kV/cm. Using a lognormal plot of failure times to represent the data, an S-shaped pattern, indicative of two failure modes, is observed. The later failures represent the limiting device lifetimes and these values that were used to compute lifetime prediction values. It was found that the activation energy for failure was ∼1.1 eV and the voltage acceleration factor was ∼5.3. Scanning electron microscopy analysis revealed that arc discharge is the most prominent failure mechanism during operation.

Original language	English (US)
Title of host publication	IEEE International Symposium on Applications of Ferroelectrics
Editors	S K Streiffer, B J Gibbons, T Tsurumi
Pages	357-360
Number of pages	4
Volume	1
State	Published - 2000
Event	12th IEEE International Symposium on Applications of Ferroelectrics - Honolulu, HI, United States Duration: Jul 21 2000 → Aug 2 2000

Other

Other	12th IEEE International Symposium on Applications of Ferroelectrics
Country/Territory	United States
City	Honolulu, HI
Period	7/21/00 → 8/2/00

All Science Journal Classification (ASJC) codes

General Engineering
General Materials Science

Cite this

@inproceedings{627d227f1aa747e68caf61057de27432,

title = "Highly accelerated lifetime testing (HALT) of lead zirconate titanate (PZT) thin films",

abstract = "The lifetime of PZT films under dc field is relevant for both capacitive and electromechanical applications. To assess the factors controlling the lifetime, a series of highly accelerated lifetime tests (HALT) were performed on ∼0.88 μm thick sol-gel PZT (52/48) thin films exposed to temperatures ranging from 100°C to 180°C and electric fields ranging from 284 to 455 kV/cm. Using a lognormal plot of failure times to represent the data, an S-shaped pattern, indicative of two failure modes, is observed. The later failures represent the limiting device lifetimes and these values that were used to compute lifetime prediction values. It was found that the activation energy for failure was ∼1.1 eV and the voltage acceleration factor was ∼5.3. Scanning electron microscopy analysis revealed that arc discharge is the most prominent failure mechanism during operation.",

author = "Polcawich, {R. G.} and C. Feng and P. Vanatta and R. Piekarz and Trolier-McKinstry, {Susan E.} and M. Dubey and M. Ervin",

year = "2000",

language = "English (US)",

volume = "1",

pages = "357--360",

editor = "Streiffer, {S K} and Gibbons, {B J} and T Tsurumi",

booktitle = "IEEE International Symposium on Applications of Ferroelectrics",

note = "12th IEEE International Symposium on Applications of Ferroelectrics ; Conference date: 21-07-2000 Through 02-08-2000",

}

Polcawich, RG, Feng, C, Vanatta, P, Piekarz, R, Trolier-McKinstry, SE, Dubey, M & Ervin, M 2000, Highly accelerated lifetime testing (HALT) of lead zirconate titanate (PZT) thin films. in SK Streiffer, BJ Gibbons & T Tsurumi (eds), IEEE International Symposium on Applications of Ferroelectrics. vol. 1, pp. 357-360, 12th IEEE International Symposium on Applications of Ferroelectrics, Honolulu, HI, United States, 7/21/00.

TY - GEN

T1 - Highly accelerated lifetime testing (HALT) of lead zirconate titanate (PZT) thin films

AU - Polcawich, R. G.

AU - Feng, C.

AU - Vanatta, P.

AU - Piekarz, R.

AU - Trolier-McKinstry, Susan E.

AU - Dubey, M.

AU - Ervin, M.

PY - 2000

Y1 - 2000

N2 - The lifetime of PZT films under dc field is relevant for both capacitive and electromechanical applications. To assess the factors controlling the lifetime, a series of highly accelerated lifetime tests (HALT) were performed on ∼0.88 μm thick sol-gel PZT (52/48) thin films exposed to temperatures ranging from 100°C to 180°C and electric fields ranging from 284 to 455 kV/cm. Using a lognormal plot of failure times to represent the data, an S-shaped pattern, indicative of two failure modes, is observed. The later failures represent the limiting device lifetimes and these values that were used to compute lifetime prediction values. It was found that the activation energy for failure was ∼1.1 eV and the voltage acceleration factor was ∼5.3. Scanning electron microscopy analysis revealed that arc discharge is the most prominent failure mechanism during operation.

AB - The lifetime of PZT films under dc field is relevant for both capacitive and electromechanical applications. To assess the factors controlling the lifetime, a series of highly accelerated lifetime tests (HALT) were performed on ∼0.88 μm thick sol-gel PZT (52/48) thin films exposed to temperatures ranging from 100°C to 180°C and electric fields ranging from 284 to 455 kV/cm. Using a lognormal plot of failure times to represent the data, an S-shaped pattern, indicative of two failure modes, is observed. The later failures represent the limiting device lifetimes and these values that were used to compute lifetime prediction values. It was found that the activation energy for failure was ∼1.1 eV and the voltage acceleration factor was ∼5.3. Scanning electron microscopy analysis revealed that arc discharge is the most prominent failure mechanism during operation.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034471880&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034471880

VL - 1

SP - 357

EP - 360

BT - IEEE International Symposium on Applications of Ferroelectrics

A2 - Streiffer, S K

A2 - Gibbons, B J

A2 - Tsurumi, T

T2 - 12th IEEE International Symposium on Applications of Ferroelectrics

Y2 - 21 July 2000 through 2 August 2000

ER -

Highly accelerated lifetime testing (HALT) of lead zirconate titanate (PZT) thin films

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