Highly conductive SrVO₃ as a bottom electrode for functional perovskite oxides

Stoichiometric SrVO₃ thin films grown by hybrid molecular beam epitaxy are demonstrated, meeting the stringent requirements of an ideal bottom electrode material. They display an order of magnitude lower room temperature resistivity and superior chemical stability, compared to the commonly employed SrRuO₃, as well as atomically smooth surfaces. Excellent structural compatibility with perovskite and related structures renders SrVO₃ a high performance electrode material with the potential to promote the creation of new functional oxide electronic devices.