TY - JOUR
T1 - Highly enhanced performance of integrated piezo photo-transistor with dual inverted OLED gate and nanowire array channel
AU - Bi, Sheng
AU - Li, Qikun
AU - He, Zhengran
AU - Guo, Qinglei
AU - Asare-Yeboah, Kyeiwaa
AU - Liu, Yun
AU - Jiang, Chengming
N1 - Publisher Copyright:
© 2019
PY - 2019/12
Y1 - 2019/12
N2 - Piezo-phototronic-effect possesses potential revolutionary applications in optoelectronic systems, malleable optical processing, biomedical diagnostics, and communication. Here, we report a novel structural device, dual piezo photo-transistor (DPPT), based on piezo invert-structured organic light emitting diode (OLED) as gate control and piezo nanowires (NWs) array as charge transport channel to realize tunable photoelectric properties dramatic enhancement achieved by piezo-phototronic-effect in both stimulation gate electrode and the metal-semiconductor-metal channel. Systematic analyses are carried out on electron generated as well as the electric field distribution under various bending/strain direction and degree with the c-direction ZnO NWs grown both vertically and horizontally in OLED gate and NW channel, respectively. The piezo-phototronic transistors under mechanical deformation yield a current on/off ratio of 106, more than 80 times higher as compared to the one without deformation. The enhancement of the integrated DPPTs, taking advantage of piezo-phototronic effect, may open up opportunities in innovative applications in various optoelectronic devices and flexible integrated systems.
AB - Piezo-phototronic-effect possesses potential revolutionary applications in optoelectronic systems, malleable optical processing, biomedical diagnostics, and communication. Here, we report a novel structural device, dual piezo photo-transistor (DPPT), based on piezo invert-structured organic light emitting diode (OLED) as gate control and piezo nanowires (NWs) array as charge transport channel to realize tunable photoelectric properties dramatic enhancement achieved by piezo-phototronic-effect in both stimulation gate electrode and the metal-semiconductor-metal channel. Systematic analyses are carried out on electron generated as well as the electric field distribution under various bending/strain direction and degree with the c-direction ZnO NWs grown both vertically and horizontally in OLED gate and NW channel, respectively. The piezo-phototronic transistors under mechanical deformation yield a current on/off ratio of 106, more than 80 times higher as compared to the one without deformation. The enhancement of the integrated DPPTs, taking advantage of piezo-phototronic effect, may open up opportunities in innovative applications in various optoelectronic devices and flexible integrated systems.
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U2 - 10.1016/j.nanoen.2019.104101
DO - 10.1016/j.nanoen.2019.104101
M3 - Article
AN - SCOPUS:85072073887
SN - 2211-2855
VL - 66
JO - Nano Energy
JF - Nano Energy
M1 - 104101
ER -