TY - JOUR
T1 - Highly linear Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMTs
AU - Liu, Jie
AU - Zhou, Yugang
AU - Chu, Rongming
AU - Cai, Yong
AU - Chen, Kevin J.
AU - Lau, Kei May
N1 - Funding Information:
Manuscript received October 11, 2004; revised December 13, 2004. This work was supported by the Innovation and Technology Commission of Hong Kong under Grant ITS176/01B. The review of this letter was arranged by Editor T. Mizutani.
PY - 2005/3/1
Y1 - 2005/3/1
N2 - We report an Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (fT) of 12 GHz and a peak power gain cutoff frequency (fmax) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.
AB - We report an Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (fT) of 12 GHz and a peak power gain cutoff frequency (fmax) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.
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U2 - 10.1109/LED.2005.843218
DO - 10.1109/LED.2005.843218
M3 - Article
AN - SCOPUS:15544386945
SN - 0741-3106
VL - 26
SP - 145
EP - 147
JO - IEEE Electron Device Letters
JF - IEEE Electron Device Letters
IS - 3
ER -