Highly linear Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMTs

Jie Liu; Yugang Zhou; Rongming Chu; Yong Cai; Kevin J. Chen; Kei May Lau

doi:10.1109/LED.2005.843218

Highly linear Al_0.3 Ga_0.7 N-Al_0.05 Ga_0.95 N-GaN composite-channel HEMTs

Jie Liu
, Yugang Zhou
, Rongming Chu
, Yong Cai
, Kevin J. Chen
, Kei May Lau

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

We report an Al_0.3 Ga_0.7 N-Al_0.05 Ga_0.95 N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (f_T) of 12 GHz and a peak power gain cutoff frequency (f_max) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.

Original language	English (US)
Pages (from-to)	145-147
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	3
DOIs	https://doi.org/10.1109/LED.2005.843218
State	Published - Mar 1 2005

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2005.843218

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@article{294dd6bff8a34ff08a481a8ddaa5c93e,

title = "Highly linear Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMTs",

abstract = "We report an Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5\% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (fT) of 12 GHz and a peak power gain cutoff frequency (fmax) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45\% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.",

author = "Jie Liu and Yugang Zhou and Rongming Chu and Yong Cai and Chen, \{Kevin J.\} and Lau, \{Kei May\}",

note = "Funding Information: Manuscript received October 11, 2004; revised December 13, 2004. This work was supported by the Innovation and Technology Commission of Hong Kong under Grant ITS176/01B. The review of this letter was arranged by Editor T. Mizutani.",

year = "2005",

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doi = "10.1109/LED.2005.843218",

language = "English (US)",

volume = "26",

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journal = "IEEE Electron Device Letters",

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T1 - Highly linear Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMTs

AU - Liu, Jie

AU - Zhou, Yugang

AU - Chu, Rongming

AU - Cai, Yong

AU - Chen, Kevin J.

AU - Lau, Kei May

N1 - Funding Information: Manuscript received October 11, 2004; revised December 13, 2004. This work was supported by the Innovation and Technology Commission of Hong Kong under Grant ITS176/01B. The review of this letter was arranged by Editor T. Mizutani.

PY - 2005/3/1

Y1 - 2005/3/1

N2 - We report an Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (fT) of 12 GHz and a peak power gain cutoff frequency (fmax) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.

AB - We report an Al0.3 Ga0.7 N-Al0.05 Ga0.95 N-GaN composite-channel HEMT with enhanced linearity. By engineering the channel region, i.e., inserting a 6-nm-thick AlGaN layer with 5% Al composition in the channel region, a composite-channel HEMT was demonstrated. Transconductance and cutoff frequencies of a 1 × 100 μm HEMT are kept near their peak values throughout the low- and high-current operating levels, a desirable feature for linear power amplifiers. The composite-channel HEMT exhibits a peak transconductance of 150 mS/mm, a peak current gain cutoff frequency (fT) of 12 GHz and a peak power gain cutoff frequency (fmax) of 30 GHz. For devices grown on sapphire substrate, maximum power density of 3.38 W/mm, power-added efficiency of 45% are obtained at 2 GHz. The output third-order intercept point (OIP3) is 33.2 dBm from two-tone measurement at 2 GHz.

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DO - 10.1109/LED.2005.843218

M3 - Article

AN - SCOPUS:15544386945

SN - 0741-3106

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SP - 145

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Highly linear Al_0.3 Ga_0.7 N-Al_0.05 Ga_0.95 N-GaN composite-channel HEMTs

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