Highly scalable, atomically thin WSe2grown via metal-organic chemical vapor deposition

Sarah M. Eichfeld, Lorraine Hossain, Yu Chuan Lin, Aleksander F. Piasecki, Benjamin Kupp, A. Glen Birdwell, Robert A. Burke, Ning Lu, Xin Peng, Jie Li, Angelica Azcatl, Stephen McDonnell, Robert M. Wallace, Moon J. Kim, Theresa S. Mayer, Joan M. Redwing, Joshua A. Robinson

Research output: Contribution to journalArticlepeer-review

309 Scopus citations


Tungsten diselenide (WSe2) is a two-dimensional material that is of interest for next-generation electronic and optoelectronic devices due to its direct bandgap of 1.65 eV in the monolayer form and excellent transport properties. However, technologies based on this 2D material cannot be realized without a scalable synthesis process. Here, we demonstrate the first scalable synthesis of large-area, mono and few-layer WSe2via metal-organic chemical vapor deposition using tungsten hexacarbonyl (W(CO)6) and dimethylselenium ((CH3)2Se). In addition to being intrinsically scalable, this technique allows for the precise control of the vapor-phase chemistry, which is unobtainable using more traditional oxide vaporization routes. We show that temperature, pressure, Se:W ratio, and substrate choice have a strong impact on the ensuing atomic layer structure, with optimized conditions yielding >8 μm size domains. Raman spectroscopy, atomic force microscopy (AFM), and cross-sectional transmission electron microscopy (TEM) confirm crystalline monoto-multilayer WSe2is achievable. Finally, TEM and vertical current/voltage transport provide evidence that a pristine van der Waals gap exists in WSe2/graphene heterostructures.

Original languageEnglish (US)
Pages (from-to)2080-2087
Number of pages8
JournalACS nano
Issue number2
StatePublished - Feb 24 2015

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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