Highly textured laser annealed Pb(Zr0.52Ti0.48)O 3 thin films

S. S.N. Bharadwaja; F. Griggio; J. Kulik; S. Trolier-Mckinstry

doi:10.1063/1.3615295

Highly textured laser annealed Pb(Zr_0.52Ti_0.48)O ₃ thin films

S. S.N. Bharadwaja, F. Griggio, J. Kulik, S. Trolier-Mckinstry

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

RF sputtered amorphous Pb(Zr_0.52Ti_0.48)O₃ (PZT) films (∼300-350 nm in thickness) on {111}Pt/Ti/SiO₂/Si or {001}PbTiO₃/Pt/Ti/SiO₂/Si substrates were laser crystallized to obtain highly textured {111} and {001} PZT thin films. The measured remanent polarizations and coercive fields were 31 μC/cm² and 86 kV/cm for {001} films and 24 μC/cm² and 64 kV/cm for {111} oriented PZT films, respectively. The maximum e_31,f piezoelectric charge coefficients are ∼ -11 C/m² for {001} and ∼ -9 C/m² for {111} PZT thin films respectively.

Original language	English (US)
Article number	042903
Journal	Applied Physics Letters
Volume	99
Issue number	4
DOIs	https://doi.org/10.1063/1.3615295
State	Published - Jul 25 2011

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3615295

Cite this

@article{baef89c4736943a99b823511172125d9,

title = "Highly textured laser annealed Pb(Zr0.52Ti0.48)O 3 thin films",

abstract = "RF sputtered amorphous Pb(Zr0.52Ti0.48)O3 (PZT) films (∼300-350 nm in thickness) on {111}Pt/Ti/SiO2/Si or {001}PbTiO3/Pt/Ti/SiO2/Si substrates were laser crystallized to obtain highly textured {111} and {001} PZT thin films. The measured remanent polarizations and coercive fields were 31 μC/cm2 and 86 kV/cm for {001} films and 24 μC/cm2 and 64 kV/cm for {111} oriented PZT films, respectively. The maximum e31,f piezoelectric charge coefficients are ∼ -11 C/m2 for {001} and ∼ -9 C/m2 for {111} PZT thin films respectively.",

author = "Bharadwaja, {S. S.N.} and F. Griggio and J. Kulik and S. Trolier-Mckinstry",

note = "Funding Information: This work was supported by the Center for Dielectric Studies at the Pennsylvania State University, a National Science Foundation Industry/University Cooperative Research Center (I/UCRC) Grant No. 0628817.",

year = "2011",

month = jul,

day = "25",

doi = "10.1063/1.3615295",

language = "English (US)",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Highly textured laser annealed Pb(Zr0.52Ti0.48)O 3 thin films

AU - Bharadwaja, S. S.N.

AU - Griggio, F.

AU - Kulik, J.

AU - Trolier-Mckinstry, S.

N1 - Funding Information: This work was supported by the Center for Dielectric Studies at the Pennsylvania State University, a National Science Foundation Industry/University Cooperative Research Center (I/UCRC) Grant No. 0628817.

PY - 2011/7/25

Y1 - 2011/7/25

N2 - RF sputtered amorphous Pb(Zr0.52Ti0.48)O3 (PZT) films (∼300-350 nm in thickness) on {111}Pt/Ti/SiO2/Si or {001}PbTiO3/Pt/Ti/SiO2/Si substrates were laser crystallized to obtain highly textured {111} and {001} PZT thin films. The measured remanent polarizations and coercive fields were 31 μC/cm2 and 86 kV/cm for {001} films and 24 μC/cm2 and 64 kV/cm for {111} oriented PZT films, respectively. The maximum e31,f piezoelectric charge coefficients are ∼ -11 C/m2 for {001} and ∼ -9 C/m2 for {111} PZT thin films respectively.

AB - RF sputtered amorphous Pb(Zr0.52Ti0.48)O3 (PZT) films (∼300-350 nm in thickness) on {111}Pt/Ti/SiO2/Si or {001}PbTiO3/Pt/Ti/SiO2/Si substrates were laser crystallized to obtain highly textured {111} and {001} PZT thin films. The measured remanent polarizations and coercive fields were 31 μC/cm2 and 86 kV/cm for {001} films and 24 μC/cm2 and 64 kV/cm for {111} oriented PZT films, respectively. The maximum e31,f piezoelectric charge coefficients are ∼ -11 C/m2 for {001} and ∼ -9 C/m2 for {111} PZT thin films respectively.

UR - http://www.scopus.com/inward/record.url?scp=79961038652&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79961038652&partnerID=8YFLogxK

U2 - 10.1063/1.3615295

DO - 10.1063/1.3615295

M3 - Article

AN - SCOPUS:79961038652

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042903

ER -

Highly textured laser annealed Pb(Zr_0.52Ti_0.48)O ₃ thin films

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this