Hole-mediated interactions of Mn acceptors on GaAs (110) (invited)

D. Kitchen; A. Richardella; P. Roushan; J. M. Tang; M. E. Flatt́; A. Yazdani

doi:10.1063/1.2694511

Hole-mediated interactions of Mn acceptors on GaAs (110) (invited)

D. Kitchen, A. Richardella, P. Roushan, J. M. Tang, M. E. Flatt́, A. Yazdani

Materials Research Institute (MRI)

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A scanning-tunneling-microscopy-substitution technique is used to incorporate single Mn atoms into Ga sites in GaAs (110) surfaces. The electronic states near a single Mn in the acceptor configuration produce a strong in-gap resonance associated with the acceptor level. The isolated Mn acceptor is probed in both p -type and n -type environments to access the neutral and ionized acceptor configurations. The Mn acceptor at the surface substitution site shares bulk characteristics that compare well with tight-binding calculations. The anisotropic structure of the Mn hole state plays an important role in hole-mediated interactions between the Mn acceptors. Isolated Mn pairs show a strong interaction dependence on crystal orientation and spacing. Certain pair orientations produce a strong splitting of the acceptor level into two levels with bondinglike and antibondinglike symmetries. A tight-binding model relates the acceptor level splitting and the spin-spin interaction energy J.

Original language	English (US)
Article number	09G515
Journal	Journal of Applied Physics
Volume	101
Issue number	9
DOIs	https://doi.org/10.1063/1.2694511
State	Published - 2007

All Science Journal Classification (ASJC) codes

General Physics and Astronomy

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10.1063/1.2694511

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@article{1ee830b3b0984b0b885242ed983638fd,

title = "Hole-mediated interactions of Mn acceptors on GaAs (110) (invited)",

abstract = "A scanning-tunneling-microscopy-substitution technique is used to incorporate single Mn atoms into Ga sites in GaAs (110) surfaces. The electronic states near a single Mn in the acceptor configuration produce a strong in-gap resonance associated with the acceptor level. The isolated Mn acceptor is probed in both p -type and n -type environments to access the neutral and ionized acceptor configurations. The Mn acceptor at the surface substitution site shares bulk characteristics that compare well with tight-binding calculations. The anisotropic structure of the Mn hole state plays an important role in hole-mediated interactions between the Mn acceptors. Isolated Mn pairs show a strong interaction dependence on crystal orientation and spacing. Certain pair orientations produce a strong splitting of the acceptor level into two levels with bondinglike and antibondinglike symmetries. A tight-binding model relates the acceptor level splitting and the spin-spin interaction energy J.",

author = "D. Kitchen and A. Richardella and P. Roushan and Tang, {J. M.} and Flat{\'t}, {M. E.} and A. Yazdani",

year = "2007",

doi = "10.1063/1.2694511",

language = "English (US)",

volume = "101",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "9",

}

TY - JOUR

T1 - Hole-mediated interactions of Mn acceptors on GaAs (110) (invited)

AU - Kitchen, D.

AU - Richardella, A.

AU - Roushan, P.

AU - Tang, J. M.

AU - Flatt́, M. E.

AU - Yazdani, A.

PY - 2007

Y1 - 2007

N2 - A scanning-tunneling-microscopy-substitution technique is used to incorporate single Mn atoms into Ga sites in GaAs (110) surfaces. The electronic states near a single Mn in the acceptor configuration produce a strong in-gap resonance associated with the acceptor level. The isolated Mn acceptor is probed in both p -type and n -type environments to access the neutral and ionized acceptor configurations. The Mn acceptor at the surface substitution site shares bulk characteristics that compare well with tight-binding calculations. The anisotropic structure of the Mn hole state plays an important role in hole-mediated interactions between the Mn acceptors. Isolated Mn pairs show a strong interaction dependence on crystal orientation and spacing. Certain pair orientations produce a strong splitting of the acceptor level into two levels with bondinglike and antibondinglike symmetries. A tight-binding model relates the acceptor level splitting and the spin-spin interaction energy J.

AB - A scanning-tunneling-microscopy-substitution technique is used to incorporate single Mn atoms into Ga sites in GaAs (110) surfaces. The electronic states near a single Mn in the acceptor configuration produce a strong in-gap resonance associated with the acceptor level. The isolated Mn acceptor is probed in both p -type and n -type environments to access the neutral and ionized acceptor configurations. The Mn acceptor at the surface substitution site shares bulk characteristics that compare well with tight-binding calculations. The anisotropic structure of the Mn hole state plays an important role in hole-mediated interactions between the Mn acceptors. Isolated Mn pairs show a strong interaction dependence on crystal orientation and spacing. Certain pair orientations produce a strong splitting of the acceptor level into two levels with bondinglike and antibondinglike symmetries. A tight-binding model relates the acceptor level splitting and the spin-spin interaction energy J.

UR - http://www.scopus.com/inward/record.url?scp=34248563033&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34248563033&partnerID=8YFLogxK

U2 - 10.1063/1.2694511

DO - 10.1063/1.2694511

M3 - Article

AN - SCOPUS:34248563033

SN - 0021-8979

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 09G515

ER -

Hole-mediated interactions of Mn acceptors on GaAs (110) (invited)

Abstract

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