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Hole-mediated interactions of Mn acceptors on GaAs (110) (invited)
D. Kitchen
, A. Richardella
, P. Roushan
, J. M. Tang
, M. E. Flatt́
, A. Yazdani
Materials Research Institute (MRI)
Research output
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Contribution to journal
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Article
›
peer-review
6
Scopus citations
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Keyphrases
GaAs(110)
100%
Acceptor Level
100%
Mediated Interaction
100%
Scanning Tunneling Microscopy
33%
Electronic States
33%
Two-level
33%
Crystal Orientation
33%
P-type
33%
Strong Interaction
33%
Tight-binding Model
33%
Level Splitting
33%
Interaction Energy
33%
Anisotropic Structure
33%
(110) Surface
33%
Substitution Technique
33%
Surface mutation
33%
Tight-binding
33%
Mn Single Atom
33%
Spin-spin Interaction
33%
Hole State
33%
Substitution Site
33%
Gap Resonance
33%
Material Science
Gallium Arsenide
100%
Crystal Orientation
50%
Chemistry
Environment Type
33%
Crystal Orientation
33%