Hole traps and trivalent silicon centers in metal/oxide/silicon devices

Physics & Astronomy

• metal oxides 100%
• traps 77%
• silicon 55%
• oxides 32%
• capacitance 24%
• electron paramagnetic resonance 18%
• radiation 17%
• oxygen atoms 10%
• radiation damage 10%
• occupation 10%
• electrical measurement 9%
• shift 6%
• oxygen 6%
• annealing 6%
• electric potential 5%
• electronics 5%
• atoms 5%