Hot-electron relaxation in GaAs quantum wells

S. Das Sarma, Jainendra K. Jain, R. Jalabert

Research output: Contribution to journalArticlepeer-review

40 Scopus citations


Theoretical results are obtained for the energy loss of hot electrons to longitudinal optical phonons in quasi-two-dimensional semiconductor systems for carrier temperatures between 25 and 200 K. Quantum statistics, dynamical screening, plasmon-phonon coupling, Landau damping, hot-phonon effects, and quantum-well-width corrections are included in a many-body calculation. The results are in good agreement with experiments. We resolve an important controversy in the experimental literature, as well as show that the theory applies to a much wider range of temperature than what was thought earlier.

Original languageEnglish (US)
Pages (from-to)1228-1230
Number of pages3
JournalPhysical Review B
Issue number3
StatePublished - Jan 1 1988

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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