Hot electron relaxation in polar semiconductors

S. Das Sarma; J. K. Jain; R. Jalabert

doi:10.1016/0038-1101(88)90370-X

Hot electron relaxation in polar semiconductors

S. Das Sarma, J. K. Jain, R. Jalabert

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Theoretical results are obtained for the energy-loss of hot electrons to longitudinal optical phonons in three and two dimensional semiconductor (GaAs bulk and quantum well case) systems for carrier temperatures between 25K and 200K. All the relevant physical effects (quantum statistics, dynamical screening, plasmon-phonon coupling, Landau damping, hot phonon effects and quantum-well width corrections) are included in a many-body calculation. Our theory is in good agreement with experimental results and explains quantitatively an order of magnitude discrepancy in experimental relaxation rates in GaAs quantum wells reported by different groups as arising from a partial cancellation between plasmon-phonon mode-coupling and hot phonon effects, thus resolving an important controversy in the subject.

Original language	English (US)
Pages (from-to)	695-700
Number of pages	6
Journal	Solid State Electronics
Volume	31
Issue number	3-4
DOIs	https://doi.org/10.1016/0038-1101(88)90370-X
State	Published - 1988

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/0038-1101(88)90370-X

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@article{355b2d26dd4a465f86ae220b4cfef8ac,

title = "Hot electron relaxation in polar semiconductors",

abstract = "Theoretical results are obtained for the energy-loss of hot electrons to longitudinal optical phonons in three and two dimensional semiconductor (GaAs bulk and quantum well case) systems for carrier temperatures between 25K and 200K. All the relevant physical effects (quantum statistics, dynamical screening, plasmon-phonon coupling, Landau damping, hot phonon effects and quantum-well width corrections) are included in a many-body calculation. Our theory is in good agreement with experimental results and explains quantitatively an order of magnitude discrepancy in experimental relaxation rates in GaAs quantum wells reported by different groups as arising from a partial cancellation between plasmon-phonon mode-coupling and hot phonon effects, thus resolving an important controversy in the subject.",

author = "{Das Sarma}, S. and Jain, {J. K.} and R. Jalabert",

note = "Funding Information: The work is supported by the the support of the University Army Research Office (ARO). We also of Maryland Computing Center.",

year = "1988",

doi = "10.1016/0038-1101(88)90370-X",

language = "English (US)",

volume = "31",

pages = "695--700",

journal = "Solid State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "3-4",

}

TY - JOUR

T1 - Hot electron relaxation in polar semiconductors

AU - Das Sarma, S.

AU - Jain, J. K.

AU - Jalabert, R.

N1 - Funding Information: The work is supported by the the support of the University Army Research Office (ARO). We also of Maryland Computing Center.

PY - 1988

Y1 - 1988

N2 - Theoretical results are obtained for the energy-loss of hot electrons to longitudinal optical phonons in three and two dimensional semiconductor (GaAs bulk and quantum well case) systems for carrier temperatures between 25K and 200K. All the relevant physical effects (quantum statistics, dynamical screening, plasmon-phonon coupling, Landau damping, hot phonon effects and quantum-well width corrections) are included in a many-body calculation. Our theory is in good agreement with experimental results and explains quantitatively an order of magnitude discrepancy in experimental relaxation rates in GaAs quantum wells reported by different groups as arising from a partial cancellation between plasmon-phonon mode-coupling and hot phonon effects, thus resolving an important controversy in the subject.

AB - Theoretical results are obtained for the energy-loss of hot electrons to longitudinal optical phonons in three and two dimensional semiconductor (GaAs bulk and quantum well case) systems for carrier temperatures between 25K and 200K. All the relevant physical effects (quantum statistics, dynamical screening, plasmon-phonon coupling, Landau damping, hot phonon effects and quantum-well width corrections) are included in a many-body calculation. Our theory is in good agreement with experimental results and explains quantitatively an order of magnitude discrepancy in experimental relaxation rates in GaAs quantum wells reported by different groups as arising from a partial cancellation between plasmon-phonon mode-coupling and hot phonon effects, thus resolving an important controversy in the subject.

UR - http://www.scopus.com/inward/record.url?scp=0023983324&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0023983324&partnerID=8YFLogxK

U2 - 10.1016/0038-1101(88)90370-X

DO - 10.1016/0038-1101(88)90370-X

M3 - Article

AN - SCOPUS:0023983324

SN - 0038-1101

VL - 31

SP - 695

EP - 700

JO - Solid State Electronics

JF - Solid State Electronics

IS - 3-4

ER -

Hot electron relaxation in polar semiconductors

Abstract

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