Hybrid physical-chemical vapor transport growth of SiC bulk crystals

M. A. Fanton, Q. Li, A. Y. Polyakov, R. L. Cavalero, R. G. Ray, B. E. Weiland, M. Skowronski

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


The effects of H2 addition to the growth ambient during physical vapor transport (PVT) growth of 6H and 4H SiC were investigated using SIMS, DLTS and Hall effect measurements. Using this hybrid physical-chemical vapor transport (HPVT) approach, boules were grown using Ar-H2 and He-H2 mixtures with H2 concentrations up to 50 at%. Thermodynamic modeling suggests that addition of H2 improves the carbon transport in HPVT compared to standard PVT. This should lead to a substantial decrease in the concentration of residual N donors and the concentration of electron traps. This is confirmed by the experimental results. As expected, the source transport rate increased as H2 was added to the growth environment due to increased C transport. The background nitrogen concentration and the free electron density decreased significantly with increasing H2 concentration. The formation of electron traps (activation energies of 0.4 eV, 0.6-0.65 eV, 0.7 eV, 0.9 eV and 1 eV) was also strongly suppressed. These changes were observed for H2 concentrations as low as 4 at%. The decreased N concentration improves the ability to produce high resistivity SiC material, and for H2 concentrations as high as 10-25%, the very first wafers cut from the seed end of the boules have a resistivity exceeding 106 Ωcm.

Original languageEnglish (US)
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Number of pages4
EditionPART 1
ISBN (Print)9780878494255
StatePublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752


OtherInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country/TerritoryUnited States
CityPittsburgh, PA

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


Dive into the research topics of 'Hybrid physical-chemical vapor transport growth of SiC bulk crystals'. Together they form a unique fingerprint.

Cite this