Hybrid titanium-aluminum oxide layer as alternative high-k gate dielectric for the next generation of complementary metal-oxide-semiconductor devices

Keyphrases

• Titanium Aluminum Alloy 100%
• High-k Gate Dielectrics 100%
• Aluminum Oxide Layer 100%
• Complementary Metal Oxide Semiconductor 100%
• Band Offset 66%
• Silica 33%
• Oxides 33%
• Rutile 33%
• Materials Science 33%
• Thermal Stability 33%
• Room Temperature 33%
• Sputter Deposition 33%
• High Dielectric Constant 33%
• Dielectric Constant 33%
• Aluminum Oxide 33%
• Ultrathin 33%
• High-permittivity 33%
• Oxidation Mechanism 33%
• Silicide 33%
• Gate Oxide 33%
• Interface Formation 33%
• Gate Dielectric 33%
• High Band 33%
• Rapid Thermal Annealing 33%
• TiAl 33%
• K-band 33%
• Oxide Layer 33%
• High-k Dielectric 33%
• Fundamental Physics 33%
• Low Dielectric 33%
• Low-temperature Oxidation 33%
• Equivalent Oxide Thickness 33%
• Physics Science 33%
• High Capacitance 33%

Material Science

• Titanium 100%
• Oxide Compound 100%
• Dielectric Material 100%
• Aluminum Oxide 100%
• Complementary Metal-Oxide-Semiconductor Device 100%
• Permittivity 75%
• Band Offset 50%
• Thermal Stability 25%
• Sputter Deposition 25%
• Oxidation Reaction 25%
• Capacitance 25%
• Silicide 25%
• Titanium Oxide 25%