Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

O. O. Awadelkarim; S. J. Fonash; P. I. Mikulan; M. Ozaita; Y. D. Chan

doi:10.1016/0167-9317(95)00013-X

Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

O. O. Awadelkarim, S. J. Fonash, P. I. Mikulan, M. Ozaita, Y. D. Chan

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl₂/HBr-based chemistries and CHF₃/CF₄-based chemistries polycrystalline Si gate definition and contact etch, respectively. New experimental results are presented which provide evidence for the passivation and depassivation of defects in the gate oxide and at the oxide/Si interface by hydrogen.

Original language	English (US)
Pages (from-to)	47-50
Number of pages	4
Journal	Microelectronic Engineering
Volume	28
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(95)00013-X
State	Published - Jun 1995

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/0167-9317(95)00013-X

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abstract = "The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl2/HBr-based chemistries and CHF3/CF4-based chemistries polycrystalline Si gate definition and contact etch, respectively. New experimental results are presented which provide evidence for the passivation and depassivation of defects in the gate oxide and at the oxide/Si interface by hydrogen.",

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T2 - defect passivation and depassivation during plasma exposures and subsequent annealing

AU - Awadelkarim, O. O.

AU - Fonash, S. J.

AU - Mikulan, P. I.

AU - Ozaita, M.

AU - Chan, Y. D.

PY - 1995/6

Y1 - 1995/6

N2 - The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl2/HBr-based chemistries and CHF3/CF4-based chemistries polycrystalline Si gate definition and contact etch, respectively. New experimental results are presented which provide evidence for the passivation and depassivation of defects in the gate oxide and at the oxide/Si interface by hydrogen.

AB - The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl2/HBr-based chemistries and CHF3/CF4-based chemistries polycrystalline Si gate definition and contact etch, respectively. New experimental results are presented which provide evidence for the passivation and depassivation of defects in the gate oxide and at the oxide/Si interface by hydrogen.

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JO - Microelectronic Engineering

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ER -

Hydrogen and processing damage in CMOS device reliability: defect passivation and depassivation during plasma exposures and subsequent annealing

Abstract

All Science Journal Classification (ASJC) codes

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