Abstract
Co-implantation by As+ and H+(or D+) ions into the subsurface silicon layer of SiO2-Si structures has been performed in order to assess the role of hydrogen on dopant activation as well as structural transformation of Si under thermal anneal. The influence of the hydrogen co-implant on the electrical and structural properties of the amorphized subsurface silicon layer following thermal anneal at 300-800 °C has been evaluated by 4-point probe, Raman scattering and SIMS techniques. A considerable increase in the microcrystalline part in the subsurface amorphous implanted silicon layer has been revealed by Raman analysis of the (As++D+) co-implanted samples after a 400 °C-15 min. thermal anneal (deuterium dose was 1×1014 ions/cm2). The results also suggest perceptible effects of hydrogen on the dangling bond passivation and enhanced dopant activation.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 595-600 |
| Number of pages | 6 |
| Journal | Diffusion and Defect Data Pt.B: Solid State Phenomena |
| Volume | 69 |
| State | Published - 1999 |
| Event | Proceedings of the 1999 8th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology (GADEST '99) - Hoor, Swed Duration: Sep 25 1999 → Sep 28 1999 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- General Materials Science
- Condensed Matter Physics
- Physics and Astronomy (miscellaneous)