Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching

O. O. Awadelkarim; P. I. Mikulan; T. Gu; S. J. Fonash; R. A. Ditizio

doi:10.1109/55.285394

Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching

O. O. Awadelkarim, P. I. Mikulan, T. Gu, S. J. Fonash, R. A. Ditizio

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4 Scopus citations

Abstract

Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF3-based chemistries were studied using SiO2/Si structures. The process-parameter space for the etches consisted of magnetic field intensity and overetch percentage. Characterization was carried out by means of 1 MHz capacitance-voltage and deep-level transient spectroscopy measurements. This characterization establishes for the first time that the presence of permeating hydrogen does not prevent Si defect generation but, instead, acts only to passivate such defects. The characterization also demonstrates that this hydrogen permeation into the Si substrate is enhanced by increasing the magnetic field intensity.

Original language	English (US)
Pages (from-to)	85-87
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	15
Issue number	3
DOIs	https://doi.org/10.1109/55.285394
State	Published - Mar 1994

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/55.285394

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@article{07cde01631df427186b563cfe607dc6f,

title = "Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching",

abstract = "Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF3-based chemistries were studied using SiO2/Si structures. The process-parameter space for the etches consisted of magnetic field intensity and overetch percentage. Characterization was carried out by means of 1 MHz capacitance-voltage and deep-level transient spectroscopy measurements. This characterization establishes for the first time that the presence of permeating hydrogen does not prevent Si defect generation but, instead, acts only to passivate such defects. The characterization also demonstrates that this hydrogen permeation into the Si substrate is enhanced by increasing the magnetic field intensity.",

author = "Awadelkarim, {O. O.} and Mikulan, {P. I.} and T. Gu and Fonash, {S. J.} and Ditizio, {R. A.}",

year = "1994",

month = mar,

doi = "10.1109/55.285394",

language = "English (US)",

volume = "15",

pages = "85--87",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "3",

}

TY - JOUR

T1 - Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching

AU - Awadelkarim, O. O.

AU - Mikulan, P. I.

AU - Gu, T.

AU - Fonash, S. J.

AU - Ditizio, R. A.

PY - 1994/3

Y1 - 1994/3

N2 - Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF3-based chemistries were studied using SiO2/Si structures. The process-parameter space for the etches consisted of magnetic field intensity and overetch percentage. Characterization was carried out by means of 1 MHz capacitance-voltage and deep-level transient spectroscopy measurements. This characterization establishes for the first time that the presence of permeating hydrogen does not prevent Si defect generation but, instead, acts only to passivate such defects. The characterization also demonstrates that this hydrogen permeation into the Si substrate is enhanced by increasing the magnetic field intensity.

AB - Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF3-based chemistries were studied using SiO2/Si structures. The process-parameter space for the etches consisted of magnetic field intensity and overetch percentage. Characterization was carried out by means of 1 MHz capacitance-voltage and deep-level transient spectroscopy measurements. This characterization establishes for the first time that the presence of permeating hydrogen does not prevent Si defect generation but, instead, acts only to passivate such defects. The characterization also demonstrates that this hydrogen permeation into the Si substrate is enhanced by increasing the magnetic field intensity.

UR - http://www.scopus.com/inward/record.url?scp=0028383502&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028383502&partnerID=8YFLogxK

U2 - 10.1109/55.285394

DO - 10.1109/55.285394

M3 - Article

AN - SCOPUS:0028383502

SN - 0741-3106

VL - 15

SP - 85

EP - 87

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 3

ER -

Hydrogen Permeation, Si Defect Generation, and Their Interaction During CHF3/02 Contact Etching

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