Hydrogen plasma enhancement of boron activation in shallow junctions

A. Vengurlekar, S. Ashok, C. E. Kalnas, N. D. Theodore

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


The ability to activate large concentrations of boron at lower temperatures is a persistent contingency in the continual drive for device scaling in Si microelectronics. We report on our experimental observations offering evidence for enhancement of electrical activation of implanted boron dopant in the presence of atomic hydrogen in silicon. This increased electrical activity of boron at lower anneal temperature is attributed to the creation of vacancies in the boron-implanted region, lattice-relaxation caused by the presence of atomic hydrogen, and the effect of atomic hydrogen on boron-interstitial cluster formation.

Original languageEnglish (US)
Pages (from-to)4052-4054
Number of pages3
JournalApplied Physics Letters
Issue number18
StatePublished - Nov 1 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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