Abstract
GaAs surface modification caused by room-temperature atomic hydrogen treatment in an RF plasma system operated in the reactive ion etching (RIE) mode has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. Unlike with reported results for plasma hydrogenation at higher temperatures, the Schottky barrier height on n-GaAs is found to decrease slightly. More interestingly, a pronounced increase in the effective barrier height is seen for p-GaAs. Dopant deactivation close to the surface is also observed for both conductivity types.
Original language | English (US) |
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Pages (from-to) | 513-517 |
Number of pages | 5 |
Journal | Physica B: Physics of Condensed Matter |
Volume | 170 |
Issue number | 1-4 |
DOIs | |
State | Published - Apr 1991 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering