TY - JOUR
T1 - Hydrogen plasma modification of metal/GaAs interface
AU - Wang, Y. G.
AU - Ashok, S.
N1 - Funding Information:
This work was supportedin part by the Penn State Center for Particle Beam Interactionws ith Solids, funded by IBM.
Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 1991/4
Y1 - 1991/4
N2 - GaAs surface modification caused by room-temperature atomic hydrogen treatment in an RF plasma system operated in the reactive ion etching (RIE) mode has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. Unlike with reported results for plasma hydrogenation at higher temperatures, the Schottky barrier height on n-GaAs is found to decrease slightly. More interestingly, a pronounced increase in the effective barrier height is seen for p-GaAs. Dopant deactivation close to the surface is also observed for both conductivity types.
AB - GaAs surface modification caused by room-temperature atomic hydrogen treatment in an RF plasma system operated in the reactive ion etching (RIE) mode has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. Unlike with reported results for plasma hydrogenation at higher temperatures, the Schottky barrier height on n-GaAs is found to decrease slightly. More interestingly, a pronounced increase in the effective barrier height is seen for p-GaAs. Dopant deactivation close to the surface is also observed for both conductivity types.
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U2 - 10.1016/0921-4526(91)90168-E
DO - 10.1016/0921-4526(91)90168-E
M3 - Article
AN - SCOPUS:0026142426
SN - 0921-4526
VL - 170
SP - 513
EP - 517
JO - Physica B: Physics of Condensed Matter
JF - Physica B: Physics of Condensed Matter
IS - 1-4
ER -