Hydrogen plasma modification of metal/GaAs interface

Y. G. Wang; S. Ashok

doi:10.1016/0921-4526(91)90168-E

Hydrogen plasma modification of metal/GaAs interface

Y. G. Wang, S. Ashok

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

GaAs surface modification caused by room-temperature atomic hydrogen treatment in an RF plasma system operated in the reactive ion etching (RIE) mode has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. Unlike with reported results for plasma hydrogenation at higher temperatures, the Schottky barrier height on n-GaAs is found to decrease slightly. More interestingly, a pronounced increase in the effective barrier height is seen for p-GaAs. Dopant deactivation close to the surface is also observed for both conductivity types.

Original language	English (US)
Pages (from-to)	513-517
Number of pages	5
Journal	Physica B: Physics of Condensed Matter
Volume	170
Issue number	1-4
DOIs	https://doi.org/10.1016/0921-4526(91)90168-E
State	Published - Apr 1991

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/0921-4526(91)90168-E

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title = "Hydrogen plasma modification of metal/GaAs interface",

abstract = "GaAs surface modification caused by room-temperature atomic hydrogen treatment in an RF plasma system operated in the reactive ion etching (RIE) mode has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. Unlike with reported results for plasma hydrogenation at higher temperatures, the Schottky barrier height on n-GaAs is found to decrease slightly. More interestingly, a pronounced increase in the effective barrier height is seen for p-GaAs. Dopant deactivation close to the surface is also observed for both conductivity types.",

author = "Wang, \{Y. G.\} and S. Ashok",

note = "Funding Information: This work was supportedin part by the Penn State Center for Particle Beam Interactionws ith Solids, funded by IBM. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.",

year = "1991",

month = apr,

doi = "10.1016/0921-4526(91)90168-E",

language = "English (US)",

volume = "170",

pages = "513--517",

journal = "Physica B: Physics of Condensed Matter",

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T1 - Hydrogen plasma modification of metal/GaAs interface

AU - Wang, Y. G.

AU - Ashok, S.

N1 - Funding Information: This work was supportedin part by the Penn State Center for Particle Beam Interactionws ith Solids, funded by IBM. Copyright: Copyright 2014 Elsevier B.V., All rights reserved.

PY - 1991/4

Y1 - 1991/4

N2 - GaAs surface modification caused by room-temperature atomic hydrogen treatment in an RF plasma system operated in the reactive ion etching (RIE) mode has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. Unlike with reported results for plasma hydrogenation at higher temperatures, the Schottky barrier height on n-GaAs is found to decrease slightly. More interestingly, a pronounced increase in the effective barrier height is seen for p-GaAs. Dopant deactivation close to the surface is also observed for both conductivity types.

AB - GaAs surface modification caused by room-temperature atomic hydrogen treatment in an RF plasma system operated in the reactive ion etching (RIE) mode has been studied by electrical characterization of subsequently fabricated Au/GaAs Schottky barriers. Unlike with reported results for plasma hydrogenation at higher temperatures, the Schottky barrier height on n-GaAs is found to decrease slightly. More interestingly, a pronounced increase in the effective barrier height is seen for p-GaAs. Dopant deactivation close to the surface is also observed for both conductivity types.

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U2 - 10.1016/0921-4526(91)90168-E

DO - 10.1016/0921-4526(91)90168-E

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AN - SCOPUS:0026142426

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JO - Physica B: Physics of Condensed Matter

JF - Physica B: Physics of Condensed Matter

IS - 1-4

ER -

Hydrogen plasma modification of metal/GaAs interface

Abstract

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