Abstract
Direct H2S decomposition induced by plasma with an aid of alumina-supported metal sulfide semiconductors (ZnS/Al2O3 and CdS/Al2O3) for the production of hydrogen was investigated in a dielectric barrier discharge (DBD) reactor. Effects of specific input energy (SIE), feed flow rate, metal sulfide loading, and added hydrogen on the performance of H2S decomposition were studied. With the aids of ZnS/Al2O3 and CdS/Al2O3, full conversion was obtained at reasonably low energy costs. The 100-h test runs indicated that both ZnS/Al2O3 and CdS/Al 2O3 were stable in the course of H2S decomposition. A supported metal sulfide solid solution (Zn0.4Cd 0.6S/Al2O3) exhibited higher performance than ZnS/Al2O3 and CdS/Al2O3, achieving full conversion at a reduced energy cost. The mechanism of the plasma-induced H2S decomposition with an aid of a semiconductor catalyst was tentatively proposed.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 14415-14423 |
| Number of pages | 9 |
| Journal | International Journal of Hydrogen Energy |
| Volume | 38 |
| Issue number | 34 |
| DOIs | |
| State | Published - Nov 13 2013 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Renewable Energy, Sustainability and the Environment
- Fuel Technology
- Condensed Matter Physics
- Energy Engineering and Power Technology
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