Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress

B. R. Tuttle, K. Hess, L. F. Register

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Fingerprint

Dive into the research topics of 'Hydrogen-related defect creation at the Si(100)-SiO2 interface of metal-oxide-semiconductor field effect transistors during hot electron stress'. Together they form a unique fingerprint.

Keyphrases

Physics

Engineering

Material Science