Abstract
Integration of the black matrix (BM) in active-matrix liquid-crystal displays (AMLCDs) into the TFT array is desirable to improve display performance. This requires a black-matrix material that is both an optical absorber and an electrical insulator. Amorphous silicon germanium (a-SiGe:H) is a candidate material for this application. When deposited by magnetron sputtering, a-SiGe:H can have both high optical density and high electrical resistivity. Compared to organic materials considered for black-matrix integration, a-SiGe:H offers higher optical density at a given film thickness, more-flexible processing, and better process compatibility with AMLCD fabrication.
Original language | English (US) |
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Pages (from-to) | 393-397 |
Number of pages | 5 |
Journal | Journal of the Society for Information Display |
Volume | 5 |
Issue number | 4 |
DOIs | |
State | Published - 1997 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering