Hydrogenated VO2 Bits for Probabilistic Computing

Sunbin Deng; Tae Joon Park; Haoming Yu; Arnob Saha; A. N.M.Nafiul Islam; Qi Wang; Abhronil Sengupta; Shriram Ramanathan

doi:10.1109/LED.2023.3303875

Hydrogenated VO₂ Bits for Probabilistic Computing

Sunbin Deng, Tae Joon Park, Haoming Yu, Arnob Saha, A. N.M.Nafiul Islam, Qi Wang, Abhronil Sengupta, Shriram Ramanathan

Electrical Engineering

Research output: Contribution to journal › Article › peer-review

7 Citations (SciVal)

Abstract

The stochastic nature of electronic phase transitions can serve as a random number generating source. This work reports probabilistic bits ( p -bits) based on hydrogen-doped vanadium oxide (H-VO2) devices with tunable insulator-metal transition (IMT) characteristics. Hydrogen donor doping reduces ground state resistance and enables control over threshold switching voltage in the post-fabricated devices. Through a paired-pulse scheme, the H-VO2 devices could generate stochastic bit sequences with adjustable switching probabilities. The sequence with a p -bit value of 0.488 could pass 14 out of 15 National Institute of Standards and Technology (NIST) random and pseudorandom number generator tests.

Original language	English (US)
Pages (from-to)	1776-1779
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	44
Issue number	10
DOIs	https://doi.org/10.1109/LED.2023.3303875
State	Published - Oct 1 2023

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2023.3303875

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AU - Yu, Haoming

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AU - Islam, A. N.M.Nafiul

AU - Wang, Qi

AU - Sengupta, Abhronil

AU - Ramanathan, Shriram

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AB - The stochastic nature of electronic phase transitions can serve as a random number generating source. This work reports probabilistic bits ( p -bits) based on hydrogen-doped vanadium oxide (H-VO2) devices with tunable insulator-metal transition (IMT) characteristics. Hydrogen donor doping reduces ground state resistance and enables control over threshold switching voltage in the post-fabricated devices. Through a paired-pulse scheme, the H-VO2 devices could generate stochastic bit sequences with adjustable switching probabilities. The sequence with a p -bit value of 0.488 could pass 14 out of 15 National Institute of Standards and Technology (NIST) random and pseudorandom number generator tests.

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Hydrogenated VO₂ Bits for Probabilistic Computing

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