Hydrogenated VO2 Bits for Probabilistic Computing

Sunbin Deng, Tae Joon Park, Haoming Yu, Arnob Saha, A. N.M.Nafiul Islam, Qi Wang, Abhronil Sengupta, Shriram Ramanathan

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

The stochastic nature of electronic phase transitions can serve as a random number generating source. This work reports probabilistic bits ( p -bits) based on hydrogen-doped vanadium oxide (H-VO2) devices with tunable insulator-metal transition (IMT) characteristics. Hydrogen donor doping reduces ground state resistance and enables control over threshold switching voltage in the post-fabricated devices. Through a paired-pulse scheme, the H-VO2 devices could generate stochastic bit sequences with adjustable switching probabilities. The sequence with a p -bit value of 0.488 could pass 14 out of 15 National Institute of Standards and Technology (NIST) random and pseudorandom number generator tests.

Original languageEnglish (US)
Pages (from-to)1776-1779
Number of pages4
JournalIEEE Electron Device Letters
Volume44
Issue number10
DOIs
StatePublished - Oct 1 2023

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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