Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon

I. A. Chaiyasena; Patrick M. Lenahan; G. J. Dunn

doi:10.1063/1.104986

Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon

I. A. Chaiyasena, Patrick M. Lenahan, G. J. Dunn

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Abstract

We report the first observation of a nitrogen dangling bond center in nitrided thermally grown silicon dioxide films on silicon. Interpretation of the ¹⁴N hyperfine parameters indicates that the unpaired electron wave function is strongly localized on the central nitrogen and that the wave function is highly p in character.

Original language	English (US)
Pages (from-to)	2141-2143
Number of pages	3
Journal	Applied Physics Letters
Volume	58
Issue number	19
DOIs	https://doi.org/10.1063/1.104986
State	Published - Dec 1 1991

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon",

abstract = "We report the first observation of a nitrogen dangling bond center in nitrided thermally grown silicon dioxide films on silicon. Interpretation of the 14N hyperfine parameters indicates that the unpaired electron wave function is strongly localized on the central nitrogen and that the wave function is highly p in character.",

author = "Chaiyasena, {I. A.} and Lenahan, {Patrick M.} and Dunn, {G. J.}",

year = "1991",

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T1 - Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon

AU - Chaiyasena, I. A.

AU - Lenahan, Patrick M.

AU - Dunn, G. J.

PY - 1991/12/1

Y1 - 1991/12/1

N2 - We report the first observation of a nitrogen dangling bond center in nitrided thermally grown silicon dioxide films on silicon. Interpretation of the 14N hyperfine parameters indicates that the unpaired electron wave function is strongly localized on the central nitrogen and that the wave function is highly p in character.

AB - We report the first observation of a nitrogen dangling bond center in nitrided thermally grown silicon dioxide films on silicon. Interpretation of the 14N hyperfine parameters indicates that the unpaired electron wave function is strongly localized on the central nitrogen and that the wave function is highly p in character.

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JO - Applied Physics Letters

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Identification of a paramagnetic nitrogen dangling bond defect in nitrided silicon dioxide films on silicon

Abstract

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