A spin dependent recombination (SDR) spectrum observed in a wide range of SiC metal oxide semiconducting field effect transistors (MOSFETs) has previously been only tentatively linked to a silicon vacancy or vacancy related defect. By resolving hyperfine interactions in SDR detected spectra with 13C nuclei, we provide an extremely strong argument identifying the SDR spectrum with a silicon vacancy. Since the silicon vacancy spectrum dominates the SDR response in a wide variety of SiC MOSFETs, silicon vacancies are quite important traps in this technology.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)