Identification of atomic scale defects involved in oxide leakage currents

Patrick M. Lenahan; J. J. Mele; J. Campbell; A. Kang; R. K. Lowry; D. Woodbury; S. T. Liu

Identification of atomic scale defects involved in oxide leakage currents

Patrick M. Lenahan, J. J. Mele, J. Campbell, A. Kang, R. K. Lowry, D. Woodbury, S. T. Liu

Research output: Contribution to conference › Paper › peer-review

Abstract

We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon `dangling bond' centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200 °C) in air.

Original language	English (US)
Pages	112-115
Number of pages	4
State	Published - Dec 1 2000
Event	2000 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA Duration: Oct 23 2000 → Oct 26 2000

Other

Other	2000 IEEE International Integrated Reliability Workshop
City	Lake Tahoe, CA, USA
Period	10/23/00 → 10/26/00

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering

Cite this

@conference{f373b04a05aa4106869e218470eaba6a,

title = "Identification of atomic scale defects involved in oxide leakage currents",

abstract = "We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon `dangling bond' centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200 °C) in air.",

author = "Lenahan, {Patrick M.} and Mele, {J. J.} and J. Campbell and A. Kang and Lowry, {R. K.} and D. Woodbury and Liu, {S. T.}",

year = "2000",

month = dec,

day = "1",

language = "English (US)",

pages = "112--115",

note = "2000 IEEE International Integrated Reliability Workshop ; Conference date: 23-10-2000 Through 26-10-2000",

}

TY - CONF

T1 - Identification of atomic scale defects involved in oxide leakage currents

AU - Lenahan, Patrick M.

AU - Mele, J. J.

AU - Campbell, J.

AU - Kang, A.

AU - Lowry, R. K.

AU - Woodbury, D.

AU - Liu, S. T.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon `dangling bond' centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200 °C) in air.

AB - We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon `dangling bond' centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200 °C) in air.

UR - http://www.scopus.com/inward/record.url?scp=0034429474&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034429474&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0034429474

SP - 112

EP - 115

T2 - 2000 IEEE International Integrated Reliability Workshop

Y2 - 23 October 2000 through 26 October 2000

ER -

Identification of atomic scale defects involved in oxide leakage currents

Abstract

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All Science Journal Classification (ASJC) codes

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