Identification of atomic scale defects involved in oxide leakage currents

Patrick M. Lenahan, J. J. Mele, J. Campbell, A. Kang, R. K. Lowry, D. Woodbury, S. T. Liu

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations


We present evidence linking specific atomic scale defects to leakage currents in thermally grown silicon dioxide thin films on silicon. The defects identified are oxygen deficient silicon `dangling bond' centers. These centers have been identified through electron spin resonance measurements. We find a strong correspondence between the generation of an oxygen deficient silicon dangling bond defect in the oxide and the appearance of oxide leakage currents. We observe a strong correlation between the disappearance of these centers and the disappearance of leakage currents in relatively low temperature anneals (200 °C) in air.

Original languageEnglish (US)
Number of pages4
StatePublished - Dec 1 2000
Event2000 IEEE International Integrated Reliability Workshop - Lake Tahoe, CA, USA
Duration: Oct 23 2000Oct 26 2000


Other2000 IEEE International Integrated Reliability Workshop
CityLake Tahoe, CA, USA

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering


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