Identification of deep level defects in SiC bipolar junction transistors

P. M. Lenahan; N. T. Pfeiffenberger; T. G. Pribicko; A. J. Lelis

doi:10.4028/0-87849-425-1.567

Identification of deep level defects in SiC bipolar junction transistors

P. M. Lenahan, N. T. Pfeiffenberger, T. G. Pribicko, A. J. Lelis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

Original language	English (US)
Title of host publication	Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
Publisher	Trans Tech Publications Ltd
Pages	567-570
Number of pages	4
Edition	PART 1
ISBN (Print)	9780878494255
DOIs	https://doi.org/10.4028/0-87849-425-1.567
State	Published - 2006
Event	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States Duration: Sep 18 2005 → Sep 23 2005

Publication series

Name	Materials Science Forum
Number	PART 1
Volume	527-529
ISSN (Print)	0255-5476
ISSN (Electronic)	1662-9752

Other

Other	International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country/Territory	United States
City	Pittsburgh, PA
Period	9/18/05 → 9/23/05

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.4028/0-87849-425-1.567

Cite this

Lenahan, P. M., Pfeiffenberger, N. T., Pribicko, T. G., & Lelis, A. J. (2006). Identification of deep level defects in SiC bipolar junction transistors. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005 (PART 1 ed., pp. 567-570). (Materials Science Forum; Vol. 527-529, No. PART 1). Trans Tech Publications Ltd. https://doi.org/10.4028/0-87849-425-1.567

Lenahan, P. M. ; Pfeiffenberger, N. T. ; Pribicko, T. G. et al. / Identification of deep level defects in SiC bipolar junction transistors. Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. Trans Tech Publications Ltd, 2006. pp. 567-570 (Materials Science Forum; PART 1).

@inproceedings{e10148407be14ee88a05d6134bdb72a9,

title = "Identification of deep level defects in SiC bipolar junction transistors",

abstract = "In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.",

author = "Lenahan, {P. M.} and Pfeiffenberger, {N. T.} and Pribicko, {T. G.} and Lelis, {A. J.}",

year = "2006",

doi = "10.4028/0-87849-425-1.567",

language = "English (US)",

isbn = "9780878494255",

series = "Materials Science Forum",

publisher = "Trans Tech Publications Ltd",

number = "PART 1",

pages = "567--570",

booktitle = "Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005",

edition = "PART 1",

note = "International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) ; Conference date: 18-09-2005 Through 23-09-2005",

}

Lenahan, PM, Pfeiffenberger, NT, Pribicko, TG & Lelis, AJ 2006, Identification of deep level defects in SiC bipolar junction transistors. in Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 edn, Materials Science Forum, no. PART 1, vol. 527-529, Trans Tech Publications Ltd, pp. 567-570, International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005), Pittsburgh, PA, United States, 9/18/05. https://doi.org/10.4028/0-87849-425-1.567

Identification of deep level defects in SiC bipolar junction transistors. / Lenahan, P. M.; Pfeiffenberger, N. T.; Pribicko, T. G. et al.
Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1. ed. Trans Tech Publications Ltd, 2006. p. 567-570 (Materials Science Forum; Vol. 527-529, No. PART 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Identification of deep level defects in SiC bipolar junction transistors

AU - Lenahan, P. M.

AU - Pfeiffenberger, N. T.

AU - Pribicko, T. G.

AU - Lelis, A. J.

PY - 2006

Y1 - 2006

N2 - In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

AB - In this study, we report on the observation of recombination center defects in the base of 4H-SiC bipolar junction transistors. The defects are observed through a very sensitive electrically detected electron spin resonance technique called spin dependent recombination. To the best of our knowledge, these results represent the first electron spin resonance results of any kind reported in a fully processed SiC bipolar junction transistor and provide the first direct observations of the chemical and physical nature of recombination centers in SiC bipolar junction transistors. Our results clearly demonstrate the power of SDR techniques in the detection of recombination centers in SiC bipolar junction transistors.

UR - http://www.scopus.com/inward/record.url?scp=37849044567&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=37849044567&partnerID=8YFLogxK

U2 - 10.4028/0-87849-425-1.567

DO - 10.4028/0-87849-425-1.567

M3 - Conference contribution

AN - SCOPUS:37849044567

SN - 9780878494255

T3 - Materials Science Forum

SP - 567

EP - 570

BT - Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005

PB - Trans Tech Publications Ltd

T2 - International Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)

Y2 - 18 September 2005 through 23 September 2005

ER -

Lenahan PM, Pfeiffenberger NT, Pribicko TG, Lelis AJ. Identification of deep level defects in SiC bipolar junction transistors. In Silicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005. PART 1 ed. Trans Tech Publications Ltd. 2006. p. 567-570. (Materials Science Forum; PART 1). doi: 10.4028/0-87849-425-1.567

Identification of deep level defects in SiC bipolar junction transistors

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