Identification of the atomic scale defects involved in radiation damage in HfO ₂ based MOS devices

Keyphrases

• Radiation Damage 100%
• Atomic Defects 100%
• HfO2 100%
• MOS Devices 100%
• Silica 40%
• Irradiation 20%
• Metal Oxide 20%
• Oxygen Vacancy 20%
• Radiation Effects 20%
• Hole Trapping 20%
• Interface Traps 20%
• Oxide-based 20%
• Device-independent 20%
• Electron Traps 20%
• Atomic Scale 20%
• Dielectric Devices 20%
• Radiation Response 20%
• Silicon Technology 20%
• Dielectric Interface 20%

Material Science

• Radiation Damage 100%
• Dielectric Material 66%
• Silicon 33%
• Oxide Compound 33%
• Metal Oxide 33%
• Oxygen Vacancy 33%
• Hafnium 33%
• Hafnium Ion 33%

Physics

• Radiation Effect 100%
• Dielectrics 66%
• Hafnium 66%
• Silicon Oxide 33%
• Oxygen Vacancy 33%