Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

C. A. Billman; P. M. Lenahan; W. Weber

doi:10.1016/S0167-9317(97)00062-2

Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

C. A. Billman, P. M. Lenahan, W. Weber

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We show, for the first time, that E' centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only P_b centers had been directly linked to this stressing phenomena.

Original language	English (US)
Pages (from-to)	271-274
Number of pages	4
Journal	Microelectronic Engineering
Volume	36
Issue number	1-4
DOIs	https://doi.org/10.1016/S0167-9317(97)00062-2
State	Published - Jun 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/S0167-9317(97)00062-2

Cite this

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title = "Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs",

abstract = "We show, for the first time, that E' centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomena.",

author = "Billman, {C. A.} and Lenahan, {P. M.} and W. Weber",

note = "Funding Information: This work has been supportedb y the NationalA eronauticas nd SpaceA dministration (USA) througha subcontrawcti ththe Centerf or AppliedR adiationR esearcoh f PrairieV iew A & M University.",

year = "1997",

month = jun,

doi = "10.1016/S0167-9317(97)00062-2",

language = "English (US)",

volume = "36",

pages = "271--274",

journal = "Microelectronic Engineering",

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T1 - Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

AU - Billman, C. A.

AU - Lenahan, P. M.

AU - Weber, W.

N1 - Funding Information: This work has been supportedb y the NationalA eronauticas nd SpaceA dministration (USA) througha subcontrawcti ththe Centerf or AppliedR adiationR esearcoh f PrairieV iew A & M University.

PY - 1997/6

Y1 - 1997/6

N2 - We show, for the first time, that E' centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomena.

AB - We show, for the first time, that E' centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomena.

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U2 - 10.1016/S0167-9317(97)00062-2

DO - 10.1016/S0167-9317(97)00062-2

M3 - Article

AN - SCOPUS:0031150262

SN - 0167-9317

VL - 36

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EP - 274

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 1-4

ER -

Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

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