Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

C. A. Billman; P. M. Lenahan; W. Weber

doi:10.1557/proc-473-181

Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

C. A. Billman
, P. M. Lenahan
, W. Weber

Engineering Science and Mechanics

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We show, for the first time, that E′ like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only P_b centers had been directly linked to this stressing phenomenon.

Original language	English (US)
Pages (from-to)	181-184
Number of pages	4
Journal	Materials Research Society Symposium - Proceedings
Volume	473
DOIs	https://doi.org/10.1557/proc-473-181
State	Published - 1997
Event	Proceedings of the 1997 MRS Spring Symposium - San Francisco, CA, USA Duration: Mar 31 1997 → Apr 3 1997

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1557/proc-473-181

Cite this

@article{868426574810498abf32c7ead83b9950,

title = "Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs",

abstract = "We show, for the first time, that E′ like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.",

author = "Billman, \{C. A.\} and Lenahan, \{P. M.\} and W. Weber",

note = "Funding Information: This work has been supportedb y the NationalA eronauticas nd SpaceA dministration (USA) througha subcontrawcti ththe Centerf or AppliedR adiationR esearcoh f PrairieV iew A \& M University.; Proceedings of the 1997 MRS Spring Symposium ; Conference date: 31-03-1997 Through 03-04-1997",

year = "1997",

doi = "10.1557/proc-473-181",

language = "English (US)",

volume = "473",

pages = "181--184",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

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TY - JOUR

T1 - Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

AU - Billman, C. A.

AU - Lenahan, P. M.

AU - Weber, W.

N1 - Funding Information: This work has been supportedb y the NationalA eronauticas nd SpaceA dministration (USA) througha subcontrawcti ththe Centerf or AppliedR adiationR esearcoh f PrairieV iew A & M University.

PY - 1997

Y1 - 1997

N2 - We show, for the first time, that E′ like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.

AB - We show, for the first time, that E′ like centers can be generated in hot hole stressing of short channel metal oxide silicon field effect transistors (MOSFETs). Prior to this study only Pb centers had been directly linked to this stressing phenomenon.

UR - https://www.scopus.com/pages/publications/0031333444

UR - https://www.scopus.com/pages/publications/0031333444#tab=citedBy

U2 - 10.1557/proc-473-181

DO - 10.1557/proc-473-181

M3 - Conference article

AN - SCOPUS:0031333444

SN - 0272-9172

VL - 473

SP - 181

EP - 184

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1997 MRS Spring Symposium

Y2 - 31 March 1997 through 3 April 1997

ER -

Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs

Abstract

All Science Journal Classification (ASJC) codes

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