IIA-9 Undoped SiGe Heterostructure Field Effect Transistors

T. N. Jackson; S. F. Nelson; J. O. Chu; B. S. Meyerson; T. N. Jackson

doi:10.1109/16.239770

IIA-9 Undoped SiGe Heterostructure Field Effect Transistors

T. N. Jackson, S. F. Nelson, J. O. Chu, B. S. Meyerson, T. N. Jackson

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	2104-2105
Number of pages	2
Journal	IEEE Transactions on Electron Devices
Volume	40
Issue number	11
DOIs	https://doi.org/10.1109/16.239770
State	Published - Nov 1993

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/16.239770

Cite this

@article{eb9deecc425c45c8a9215b9ad2c67584,

title = "IIA-9 Undoped SiGe Heterostructure Field Effect Transistors",

author = "Jackson, {T. N.} and Nelson, {S. F.} and Chu, {J. O.} and Meyerson, {B. S.} and Jackson, {T. N.}",

year = "1993",

month = nov,

doi = "10.1109/16.239770",

language = "English (US)",

volume = "40",

pages = "2104--2105",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - IIA-9 Undoped SiGe Heterostructure Field Effect Transistors

AU - Jackson, T. N.

AU - Nelson, S. F.

AU - Chu, J. O.

AU - Meyerson, B. S.

AU - Jackson, T. N.

PY - 1993/11

Y1 - 1993/11

UR - http://www.scopus.com/inward/record.url?scp=0008674367&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0008674367&partnerID=8YFLogxK

U2 - 10.1109/16.239770

DO - 10.1109/16.239770

M3 - Article

AN - SCOPUS:0008674367

SN - 0018-9383

VL - 40

SP - 2104

EP - 2105

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

IIA-9 Undoped SiGe Heterostructure Field Effect Transistors

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this