IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S

C. M. Ransom, T. N. Jackson, J. F. DeGelormo

Research output: Contribution to journal › Article › peer-review

Original language	English (US)
Pages (from-to)	2695
Number of pages	1
Journal	IEEE Transactions on Electron Devices
Volume	38
Issue number	12
DOIs	https://doi.org/10.1109/16.158709
State	Published - Dec 1991

All Science Journal Classification (ASJC) codes

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title = "IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S",

author = "Ransom, {C. M.} and Jackson, {T. N.} and DeGelormo, {J. F.}",

year = "1991",

month = dec,

doi = "10.1109/16.158709",

language = "English (US)",

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pages = "2695",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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}

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T1 - IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S

AU - Ransom, C. M.

AU - Jackson, T. N.

AU - DeGelormo, J. F.

PY - 1991/12

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SP - 2695

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

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