IIB-4 Gate-Self-Aligned n-channel and p-channel Germanium MOSFET'S

C. M. Ransom, T. N. Jackson, J. F. DeGelormo

Research output: Contribution to journalArticlepeer-review

31 Scopus citations
Original languageEnglish (US)
Pages (from-to)2695
Number of pages1
JournalIEEE Transactions on Electron Devices
Issue number12
StatePublished - Dec 1991

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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