@article{db1cfdcaee9346d481d5b0e2b9f98c1a,
title = "IIIB-5 High-Transconductance InGaAs/InAlAs SISFET'S",
author = "Jackson, {T. N.} and Solomon, {P. M.} and Tischler, {M. A.} and Pettit, {G. D.} and Canora, {F. J.} and DeGelormo, {J. F.} and Bucchignano, {J. J.} and Wind, {S. J.}",
note = "Funding Information: Supported by ONR (N00014-89-J-1864). SDIO/IST (N00014-88-0527). and Eastman Kodak.",
year = "1991",
month = dec,
doi = "10.1109/16.158725",
language = "English (US)",
volume = "38",
pages = "2703--2704",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}