TY - JOUR
T1 - Image-enhanced bipolaron formation at organic semiconductor/electrode interfaces
AU - Schrecengost, Jonathon R.
AU - Mukhopadhyay, Sukrit
AU - Giebink, Noel C.
N1 - Funding Information:
This work was supported in part by the U.S. Department of Energy, Office of Basic Energy Sciences under Award No. DE-SC0012365.
Publisher Copyright:
© 2020 American Physical Society.
PY - 2020/10/21
Y1 - 2020/10/21
N2 - We explore the image charge interaction for organic semiconductor bipolarons near a conducting interface and find that the cross term between one of the constituent charges and the image of its neighbor stabilizes the bipolaron by up to ∼0.3 eV, dramatically increasing the concentration of this species near the interface. Using density functional theory calculations for the common hole transport molecule N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine, we validate a simple point charge description of this effect and incorporate it within an interface energy level alignment model to predict the density of polarons and bipolarons near the interface. We find that the image effect greatly enhances bipolaron formation in the first few monolayers, leading to the expectation that bipolarons account for more than 1% of the total interface charge in many cases of practical interest. This result reinforces the notion that bipolarons are robust near the contacts of many organic semiconductor devices and thus helps to rationalize their involvement in the phenomenon of unipolar organic magnetoresistance.
AB - We explore the image charge interaction for organic semiconductor bipolarons near a conducting interface and find that the cross term between one of the constituent charges and the image of its neighbor stabilizes the bipolaron by up to ∼0.3 eV, dramatically increasing the concentration of this species near the interface. Using density functional theory calculations for the common hole transport molecule N,N′-bis(3-methylphenyl)-N,N′-diphenylbenzidine, we validate a simple point charge description of this effect and incorporate it within an interface energy level alignment model to predict the density of polarons and bipolarons near the interface. We find that the image effect greatly enhances bipolaron formation in the first few monolayers, leading to the expectation that bipolarons account for more than 1% of the total interface charge in many cases of practical interest. This result reinforces the notion that bipolarons are robust near the contacts of many organic semiconductor devices and thus helps to rationalize their involvement in the phenomenon of unipolar organic magnetoresistance.
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U2 - 10.1103/PhysRevB.102.165311
DO - 10.1103/PhysRevB.102.165311
M3 - Article
AN - SCOPUS:85095121721
SN - 2469-9950
VL - 102
JO - Physical Review B
JF - Physical Review B
IS - 16
M1 - 165311
ER -