Imaging, structural, and chemical analysis of silicon nanowires

R. J. Barsotti Jr.; J. E. Fischer; C. H. Lee; J. Mahmood; C. K.W. Adu; P. C. Eklund

doi:10.1063/1.1512827

Imaging, structural, and chemical analysis of silicon nanowires

R. J. Barsotti Jr., J. E. Fischer, C. H. Lee, J. Mahmood, C. K.W. Adu, P. C. Eklund

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Laser ablation has been used to grow silicon nanowires with an average silicon crystal core diameter of 6.7nm±2.9nm surrounded by an amorphous SiO_x sheath of 1-2 nm, the smallest silicon wires reported in the literature. Imaging, chemical, and structural analysis of these wires are reported. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen. Suggestions for controlled synthesis based on these growth mechanisms are made.

Original language	English (US)
Pages (from-to)	2866-2868
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	15
DOIs	https://doi.org/10.1063/1.1512827
State	Published - Oct 7 2002

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1512827

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title = "Imaging, structural, and chemical analysis of silicon nanowires",

abstract = "Laser ablation has been used to grow silicon nanowires with an average silicon crystal core diameter of 6.7nm±2.9nm surrounded by an amorphous SiOx sheath of 1-2 nm, the smallest silicon wires reported in the literature. Imaging, chemical, and structural analysis of these wires are reported. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen. Suggestions for controlled synthesis based on these growth mechanisms are made.",

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AU - Fischer, J. E.

AU - Lee, C. H.

AU - Mahmood, J.

AU - Adu, C. K.W.

AU - Eklund, P. C.

PY - 2002/10/7

Y1 - 2002/10/7

N2 - Laser ablation has been used to grow silicon nanowires with an average silicon crystal core diameter of 6.7nm±2.9nm surrounded by an amorphous SiOx sheath of 1-2 nm, the smallest silicon wires reported in the literature. Imaging, chemical, and structural analysis of these wires are reported. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen. Suggestions for controlled synthesis based on these growth mechanisms are made.

AB - Laser ablation has been used to grow silicon nanowires with an average silicon crystal core diameter of 6.7nm±2.9nm surrounded by an amorphous SiOx sheath of 1-2 nm, the smallest silicon wires reported in the literature. Imaging, chemical, and structural analysis of these wires are reported. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen. Suggestions for controlled synthesis based on these growth mechanisms are made.

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Imaging, structural, and chemical analysis of silicon nanowires

Abstract

All Science Journal Classification (ASJC) codes

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