Imaging, structural, and chemical analysis of silicon nanowires

R. J. Barsotti Jr., J. E. Fischer, C. H. Lee, J. Mahmood, C. K.W. Adu, P. C. Eklund

Research output: Contribution to journalArticlepeer-review

28 Scopus citations


Laser ablation has been used to grow silicon nanowires with an average silicon crystal core diameter of 6.7nm±2.9nm surrounded by an amorphous SiOx sheath of 1-2 nm, the smallest silicon wires reported in the literature. Imaging, chemical, and structural analysis of these wires are reported. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen. Suggestions for controlled synthesis based on these growth mechanisms are made.

Original languageEnglish (US)
Pages (from-to)2866-2868
Number of pages3
JournalApplied Physics Letters
Issue number15
StatePublished - Oct 7 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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