Imaging, structural and chemical analysis of silicon nanowires

R. J. Barsotti; J. E. Fischer; C. H. Lee; J. Mahmood; C. K.W. Adu; P. C. Eklund

Imaging, structural and chemical analysis of silicon nanowires

R. J. Barsotti, J. E. Fischer, C. H. Lee, J. Mahmood, C. K.W. Adu, P. C. Eklund

Research output: Contribution to journal › Conference article › peer-review

Abstract

Laser ablation has been used to grow silicon nanowires with an average diameter of 6.7 nm ± 2.7 nm surrounded by an amorphous SiO_x sheath of 1-2 nm. This paper reports the imaging, chemical and structural analysis of these wires. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen.

Original language	English (US)
Pages (from-to)	627-631
Number of pages	5
Journal	Materials Research Society Symposium - Proceedings
Volume	737
State	Published - 2003
Event	Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: Dec 2 2002 → Dec 5 2002

All Science Journal Classification (ASJC) codes

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Imaging, structural and chemical analysis of silicon nanowires",

abstract = "Laser ablation has been used to grow silicon nanowires with an average diameter of 6.7 nm ± 2.7 nm surrounded by an amorphous SiOx sheath of 1-2 nm. This paper reports the imaging, chemical and structural analysis of these wires. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen.",

author = "Barsotti, {R. J.} and Fischer, {J. E.} and Lee, {C. H.} and J. Mahmood and Adu, {C. K.W.} and Eklund, {P. C.}",

year = "2003",

language = "English (US)",

volume = "737",

pages = "627--631",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Quantum Confined Semiconductor Nanostructures ; Conference date: 02-12-2002 Through 05-12-2002",

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TY - JOUR

T1 - Imaging, structural and chemical analysis of silicon nanowires

AU - Barsotti, R. J.

AU - Fischer, J. E.

AU - Lee, C. H.

AU - Mahmood, J.

AU - Adu, C. K.W.

AU - Eklund, P. C.

PY - 2003

Y1 - 2003

N2 - Laser ablation has been used to grow silicon nanowires with an average diameter of 6.7 nm ± 2.7 nm surrounded by an amorphous SiOx sheath of 1-2 nm. This paper reports the imaging, chemical and structural analysis of these wires. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen.

AB - Laser ablation has been used to grow silicon nanowires with an average diameter of 6.7 nm ± 2.7 nm surrounded by an amorphous SiOx sheath of 1-2 nm. This paper reports the imaging, chemical and structural analysis of these wires. Due to the growth temperature and the presence of calcium impurities and trace oxygen, two distinct types of wires are found. They appear to grow by two different processes. One requires a metal catalyst, the other is catalyzed by oxygen.

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UR - http://www.scopus.com/inward/citedby.url?scp=0037811553&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0037811553

SN - 0272-9172

VL - 737

SP - 627

EP - 631

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Confined Semiconductor Nanostructures

Y2 - 2 December 2002 through 5 December 2002

ER -

Imaging, structural and chemical analysis of silicon nanowires

Abstract

All Science Journal Classification (ASJC) codes

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