Impact of CF4 plasma treatment on GaN

Rongming Chu, Chang Soo Shu, Man Hoi Wong, Nicolas Fichtenbaum, David Brown, Lee McCarthy, Stacia Keller, Wu Feng, James S. Speck, Umesh K. Mishra

Research output: Contribution to journalArticlepeer-review

53 Scopus citations


We present a systematic study of the impact of CF4 plasma treatment on GaN. It was found that CF4 plasma etches GaN at a slow rate and yields a smooth etched surface. The effect of CFN metal-semiconductor field-effect-transistor structures shows that the CF4 plasma introduces acceptors into the near surface region of the GaN, which depletes mobile electrons. It was further demonstrated that leakage current of AlGaN/GaN (or GaN) Schottky diodes can be significantly suppressed by proper CF4 plasma treatment. These unique properties of CF4 plasma can be utilized for the advanced processing of GaN transistors.

Original languageEnglish (US)
Pages (from-to)781-783
Number of pages3
JournalIEEE Electron Device Letters
Issue number9
StatePublished - 2007

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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