Impact of CF4 plasma treatment on GaN

Rongming Chu; Chang Soo Shu; Man Hoi Wong; Nicolas Fichtenbaum; David Brown; Lee McCarthy; Stacia Keller; Wu Feng; James S. Speck; Umesh K. Mishra

doi:10.1109/LED.2007.902849

Impact of CF₄ plasma treatment on GaN

Rongming Chu
, Chang Soo Shu
, Man Hoi Wong
, Nicolas Fichtenbaum
, David Brown
, Lee McCarthy
, Stacia Keller
, Wu Feng
, James S. Speck
, Umesh K. Mishra

Research output: Contribution to journal › Article › peer-review

60 Scopus citations

Abstract

We present a systematic study of the impact of CF₄ plasma treatment on GaN. It was found that CF₄ plasma etches GaN at a slow rate and yields a smooth etched surface. The effect of CF_N metal-semiconductor field-effect-transistor structures shows that the CF₄ plasma introduces acceptors into the near surface region of the GaN, which depletes mobile electrons. It was further demonstrated that leakage current of AlGaN/GaN (or GaN) Schottky diodes can be significantly suppressed by proper CF₄ plasma treatment. These unique properties of CF₄ plasma can be utilized for the advanced processing of GaN transistors.

Original language	English (US)
Pages (from-to)	781-783
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	9
DOIs	https://doi.org/10.1109/LED.2007.902849
State	Published - 2007

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2007.902849

Cite this

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title = "Impact of CF4 plasma treatment on GaN",

abstract = "We present a systematic study of the impact of CF4 plasma treatment on GaN. It was found that CF4 plasma etches GaN at a slow rate and yields a smooth etched surface. The effect of CFN metal-semiconductor field-effect-transistor structures shows that the CF4 plasma introduces acceptors into the near surface region of the GaN, which depletes mobile electrons. It was further demonstrated that leakage current of AlGaN/GaN (or GaN) Schottky diodes can be significantly suppressed by proper CF4 plasma treatment. These unique properties of CF4 plasma can be utilized for the advanced processing of GaN transistors.",

author = "Rongming Chu and Shu, \{Chang Soo\} and Wong, \{Man Hoi\} and Nicolas Fichtenbaum and David Brown and Lee McCarthy and Stacia Keller and Wu Feng and Speck, \{James S.\} and Mishra, \{Umesh K.\}",

note = "Funding Information: Manuscript received April 24, 2007; revised June 11, 2007. This work was supported by the ONR MINE project which is monitored by Harry Dietrich and Paul Maki. The review of this letter was arranged by Editor J. del Alamo.",

year = "2007",

doi = "10.1109/LED.2007.902849",

language = "English (US)",

volume = "28",

pages = "781--783",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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TY - JOUR

T1 - Impact of CF4 plasma treatment on GaN

AU - Chu, Rongming

AU - Shu, Chang Soo

AU - Wong, Man Hoi

AU - Fichtenbaum, Nicolas

AU - Brown, David

AU - McCarthy, Lee

AU - Keller, Stacia

AU - Feng, Wu

AU - Speck, James S.

AU - Mishra, Umesh K.

N1 - Funding Information: Manuscript received April 24, 2007; revised June 11, 2007. This work was supported by the ONR MINE project which is monitored by Harry Dietrich and Paul Maki. The review of this letter was arranged by Editor J. del Alamo.

PY - 2007

Y1 - 2007

N2 - We present a systematic study of the impact of CF4 plasma treatment on GaN. It was found that CF4 plasma etches GaN at a slow rate and yields a smooth etched surface. The effect of CFN metal-semiconductor field-effect-transistor structures shows that the CF4 plasma introduces acceptors into the near surface region of the GaN, which depletes mobile electrons. It was further demonstrated that leakage current of AlGaN/GaN (or GaN) Schottky diodes can be significantly suppressed by proper CF4 plasma treatment. These unique properties of CF4 plasma can be utilized for the advanced processing of GaN transistors.

AB - We present a systematic study of the impact of CF4 plasma treatment on GaN. It was found that CF4 plasma etches GaN at a slow rate and yields a smooth etched surface. The effect of CFN metal-semiconductor field-effect-transistor structures shows that the CF4 plasma introduces acceptors into the near surface region of the GaN, which depletes mobile electrons. It was further demonstrated that leakage current of AlGaN/GaN (or GaN) Schottky diodes can be significantly suppressed by proper CF4 plasma treatment. These unique properties of CF4 plasma can be utilized for the advanced processing of GaN transistors.

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U2 - 10.1109/LED.2007.902849

DO - 10.1109/LED.2007.902849

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SN - 0741-3106

VL - 28

SP - 781

EP - 783

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

ER -

Impact of CF₄ plasma treatment on GaN

Abstract

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